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Controlled Modification of Erbium Lifetime in Silicon Dioxide Film with Chromium or Titanium Coatings

Published online by Cambridge University Press:  01 February 2011

Nanfang Yu
Affiliation:
nyu@fas.harvard.edu, Harvard University, School of Engineering and Applied Sciences, 24 Peabody Terrace, Room 304, Cambridge, MA, 02138, United States, 6172331712
Jiming Bao
Affiliation:
jmbao@seas.harvard.edu, Harvard University, School of Engineering and Applied Sciences, Cambridge, MA, 02138, United States
Alexey Belyanin
Affiliation:
belyanin@physics.tamu.edu, Texas A&M University, Department of Physics, College Station, TX, 77843, United States
Thomas Mates
Affiliation:
tmates@mrl.ucsb.edu, University of California, Santa Barbara, Materials Department, Santa Barbara, CA, 93106, United States
Mariano Troccoli
Affiliation:
mtroccoli@argostechinc.com, Argos Tech, LLC, Santa Clara, CA, 95051, United States
Federico Capasso
Affiliation:
capasso@seas.harvard.edu, Harvard University, School of Engineering and Applied Sciences, Cambridge, MA, 02138, United States
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Abstract

We report systematic measurements of the lifetime of the 1.54 μm transition of erbium implanted at different energies in SiO2 films coated with titanium or chromium. The lifetime shows a strong reduction up to a factor of 20 with decreasing distance between the erbium and the metal coating. Our experiments combined with rigorous theoretical modeling demonstrate that a high degree of control over the radiative properties of erbium can be achieved in erbium-implanted materials.

Keywords

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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