Skip to main content Accessibility help

Controlled Incorporation of Nitrogen at The Top Surface of Silicon Oxide Gate Dielectrics

  • H. Niimi (a1), K. Koh (a1) and G. Lucovsky (a1)


During a high RF power (60–100 W) N20/He remote plasma oxidation of Si(100) at 300 °C, nitrogen atoms have been incorporated at the top surface of an ultra-thin (1.0–2.5 nm) oxide. Online Auger electron spectroscopy (AES) has been used to estimate the dielectric film thickness and track the evolution of the film growth. A chemically shifted Si-LW feature from the high RF power oxidation sample indicates that the nitrogen is bonded to the silicon at the top surface of the oxide film. The stability of the bonded nitrogen is also evident in the persistence of the N-KLL Auger peak following (i) a 30 s rapid thermal anneal (RTA) in Ar at 900 °C and (ii) a remotely excited He plasma treatment at 300 °C for 15 s.



Hide All
1 Hu, G.J. and Bruce, R.H., IEEE Trans. Electron Devices, ED-32, 584 (1985).
2 Hillenius, S.J., Liu, R., Georgiou, G.E., Field, R.L., Williams, D.S., Kornblit, A., Boulin, D.M., Johnston, R.L., and Lynch, W.T., IEDM Tech. Dig., 252 (1986).
3 Davari, B., Chang, W.H., Wordeman, M.R., Oh, C.S., Taur, Y., Petrillo, K.E., Moy, D., Bucchignano, J.J., Ng, H.Y., Rosenfield, M.G., Hohn, F.J., and Rodriguez, M.D., IEDM Tech. Dig., 56 (1988).
4 Wong, C.Y., Sun, J.Y.-C., Taur, Y., Oh, C.S., Angelucci, R., and Davari, B., IEDM Tech. Dig., 238 (1988).
5 Sun, J.Y.-C., Wong, C., Taur, Y., and Hsu, C.-H., 1989 Symp. VLSI Tech. Dig., 17 (1989).
6 Pfiester, J.R., Baker, F.K., Mele, T.C., Tseng, H.-H., Tobin, P.J., Hayden, J.D., Miller, J.W., Gunderson, CD., and Parrillo, L.C., IEEE Trans. Electron Devices, ED-37, 1842 (1990).
7 Morimoto, T., Momose, H.S., Ozawa, Y., Yamabe, K., and Iwai, H., IEDM Tech. Dig., 429 (1990).
8 Cable, J.S., Mann, R.A., and Woo, J.C.S., IEEE Electron Device Lett., EDL-12, 128 (1991).
9 Lee, D.R., Lucovsky, G., Denker, M.S., and Magee, C., J. Vac. Sei. Technol., A13, 1671 (1995).
10 Lee, D.R., Parker, CG., Häuser, J., and Lucovsky, G., J. Vac. Sei. Technol., B13, 1778 (1995).
11 Niimi, H.H., Koh, K., and Lucovsky, G., ECS Proceedings, 96–12, 623 (1996).
12 Hattangady, S.V., Niimi, H., and Lucovsky, G., Appl. Phys. Lett., 66, 3495 (1995).
13 Lucovsky, G., Yasuda, T., Maniese, L., Powell, G., Aspnes, D.E, Hattangady, S.V., Lee, D.R., Misra, V., Wortman, J.J., Emmerichs, U., Meyer, C, Bakker, HJ., Wolter, F., and Kurz, H., Proceeding of ICPS, Vancouver, Canada, p. 604 (1994).
14 Koh, K., Niimi, H., and Lucovsky, G., Mater. Res. Soc. Symp. Proc, this volume (1996).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed