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Controlled Growth of Superconducting Oxide Films Using Pulsed Laser Deposition

Published online by Cambridge University Press:  26 February 2011

A. Gupta
Affiliation:
IBM Research Center, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
M. Y. Chern
Affiliation:
IBM Research Center, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
B. W. Hussey
Affiliation:
IBM Research Center, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract:

Reflection high-energy electron diffraction (RHEED) has been used to monitor the homoepitaxial growth of SrTiO3 buffer layer, and subsequent heteroepitaxial growth of YBa2CU3O7-δ (YBCO) films, on (100) SrTiO3 by pulsed laser deposition (PLD). The RHEED pattern during initial growth of SrTiO3 becomes sharper and increases in intensity, suggesting that the smoothness of the substrate is improved by growth of the buffer layer. On the smooth surface, the growth of SrTiO3 occurs in a layer-by-layer mode as indicated by the intensity oscillations of the specular beam. YBCO films have been subsequently grown on the buffer layer using a combination of pulsed molecular oxygen and a continuous source of atomic oxygen, with the average background pressure maintained as low as 1 mTorr. A sharp streaky pattern, and intensity oscillations are also observed during growth of YBCO. The YBCO films after cooling down in 1 atm of O2 are superconducting, with zero-resistance temperature of 80 K.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. For example, see Laser Ablation for Materials Synthesis, edited by Palne, D. C. and Bravman, J. C. (Materials Research Society, Pittsburgh, PA, 1990), Vol. 191.Google Scholar
2. Terashima, T., Bando, Y., lijima, K., Hirata, K., Hayashi, K., Kamigaki, K., and Terauchi, H., Phys. Rev. Lett. 65 2684 (1990).Google Scholar
3. See, for example, Kanai, M., Kawai, T., and Kawai, S., Appl. Phys. Lett. 58 771 (1991);Google Scholar
Koinuma, H., Nagata, H., Tsukahara, T., Gonda, S., and Yoshimoto, M., Appl. Phys. Lett. 58 2027 (1991).Google Scholar
4. Gupta, A., Hussey, B. W., Kussmaul, A., and Segmüller, A., Appl. Phys. Lett. 57, 2365 (1990).Google Scholar
5. Chern, M. Y., Gupta, A., and Hussey, B. W., to be published.Google Scholar
6. Koren, G., Gupta, A., and Baseman, R. J., Appl. Phys. Lett. 54, 1920 (1989).Google Scholar
7. Gupta, A. and Hussey, B. W. Appl. Phys. Lett. 58, 1211 (1991).Google Scholar
8. Beyers, R. and Ahn, B. T., Annual Rev. Materials Science 21 335 (1991).Google Scholar
9. Kwo, J., Hong, M., Fulton, T. A., Gammel, P. L., and Mannaerts, J. P., Proc. SPIE 1187, 57 (1989).Google Scholar
10. Matijasevic, V., Garwin, E. L., and Hammond, R. H., Rev. Sci. Instrum. 61, 1747 (1990).Google Scholar
11. Matijasevic, V., Rosenthal, P., Shinohara, K., Marshall, A. F., Hammond, R. H., and Beasley, M. R., J. Mater. Res. 6, 682 (1991).Google Scholar