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Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

Published online by Cambridge University Press:  31 January 2011

Yi-Lu Chang ,
Arya Fatehi ,
Feng Li  and
Zetian Mi
Yi-Lu Chang
Affiliation:
yi-lu.chang@mail.mcgill.ca, McGill University, Montreal, Canada
Arya Fatehi
Affiliation:
arya.fatehi@mail.mcgill.ca, McGill University, Montreal, Canada
Feng Li
Affiliation:
Feng.li5@mail.mcgill.ca, McGill University, Montreal, Canada
Zetian Mi
Affiliation:
zetian.mi@mcgill.ca, McGill University, Montreal, Canada
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Abstract

We have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

Keywords

molecular beam epitaxy (MBE)nitridenanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1178: Symposium AA – Semiconductor Nanowires–Growth, Size-Dependant Properties and Applications , 2009 , 1178-AA01-12
Copyright
Copyright © Materials Research Society 2009

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