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Controlled Fabrication by LPCVD of Luminescent SiGe/SiO2 (LTO) Very Thin Multilayers

  • A. Rodríguez (a1), J. Sangrador (a1), T. Rodríguez (a1), M. Avella (a2), A. C. Prieto (a2), J. Jiménez (a2), M. I. Ortiz (a1) and C. Ballesteros (a3)...

Abstract

Amorphous SiGe/SiO2 multilayers with controlled thickness in the range of nanometers have been deposited by LPCVD at low temperature in a single multistep run. Continuous and discontinuous layers have been deposited. No intermixing between the SiGe and SiO2 layers has been observed. As-deposited and crystallized multilayers have been characterized by Raman spectroscopy, Cathodoluminescence and TEM. The luminescence emission is more intense in the discontinuous layers than in the continuous ones.

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Controlled Fabrication by LPCVD of Luminescent SiGe/SiO2 (LTO) Very Thin Multilayers

  • A. Rodríguez (a1), J. Sangrador (a1), T. Rodríguez (a1), M. Avella (a2), A. C. Prieto (a2), J. Jiménez (a2), M. I. Ortiz (a1) and C. Ballesteros (a3)...

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