Hostname: page-component-77c89778f8-rkxrd Total loading time: 0 Render date: 2024-07-18T17:05:57.002Z Has data issue: false hasContentIssue false
  • English
  • Français

Control of threading dislocations in lattice-mismatched heteroepitaxy

Published online by Cambridge University Press:  25 February 2011

L.J. Schowalter ,
A.P. Taylor ,
J. Petruzzello ,
J. Gaines  and
D. Olego
L.J. Schowalter
Affiliation:
Physic Dept. and Ctr. for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
A.P. Taylor
Affiliation:
Physic Dept. and Ctr. for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
J. Petruzzello
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
J. Gaines
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
D. Olego
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
Get access

Abstract

It is generally observed that strain relaxation, which occurs by misfit dislocation formation, in lattice-mismatched heteroepitaxial layers is accompanied by the formation of threading dislocations. However, our group and others have observed that strain-relaxed epitaxial layers of In1−xGaxAs on GaAs substrates can be grown without the formation of threading dislocations in the epitaxial layer. We have been able to grow strain-relaxed layers up to 13% In concentration without observable densities of threading dislocations in the epilayer but do observe a large number of dislocations pushed into the GaAs substrate. The ability to grow strain-relaxed, lattice-mismatched heteroepitaxial layers has important practical applications. We have succeeded in growing dislocation-free layers of ZnSe on appropriately lattice-matched layers of In1−xGaxAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 485
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Chang, K.H., Bhattacharya, P.K., and Gibala, R., J. Appl. Phys, 66, 2993 (1989).Google Scholar
[2] Schowalter, L.J., Taylor, A.P., Xiao, Q.-F., Petruzzello, J., Cammack, D., and Olego, D., Poster Presentation, Spring MRS Meeting (1990).Google Scholar
[3] Krishnamoorthy, V., Ribas, P., and Park, R.M., Appl. Phys. Lett. 58, 2000 (1991).Google Scholar
[4] Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth, 27, 118 (1974).Google Scholar
[5] Fitzgerald, E.A., Ast, D.G., Kirchner, P.D., Pettit, G.D., and Woodall, J.M., J. Appl. Phys, 63, 693 (1988).Google Scholar
[6] Fox, B.A. and Jesser, W.A., J. Appl. Phys, 68, 2801 (1990).Google Scholar
[7] Orders, P.J. and Ushers, B.F., Appl. Phys. Lett. 50, 980 (1987).Google Scholar
[8] Franzosi, P., Salviati, G., Genova, F., Stano, A., and Taiariol, F., Mat. Lett., 3, 425 (1985).Google Scholar
[9] Rozgonyi, G.A., Petroff, P.M., and Panish, M.B., Appl. Phys. Lett. 24, 251 (1974).Google Scholar
[10] LeGoues, F.K., Meyerson, B.S., and Morar, J.M., Phys. Rev. Lett., 22, 2903 (1991).Google Scholar
[11] Matthews, J.W., Blakeslee, A.E., and Mader, S., Thin Solid Films, 33, 253 (1976).Google Scholar
[12] Fitzgerald, E.A., Watson, G.P., Proano, R.E., Ast, D.G., Kirchner, P.D., Pettit, G.D., and Woodall, J.M., J. Appl. Phys, 65, 2220 (1989).Google Scholar
[13] Lefebvre, A., Herbeaux, C., Bouillet, C., and Persio, J. Di, Phil. Mag. Lett., 63, 23 (1991).Google Scholar