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Control of threading dislocations in lattice-mismatched heteroepitaxy

  • L.J. Schowalter (a1), A.P. Taylor (a1), J. Petruzzello (a2), J. Gaines (a2) and D. Olego (a2)...


It is generally observed that strain relaxation, which occurs by misfit dislocation formation, in lattice-mismatched heteroepitaxial layers is accompanied by the formation of threading dislocations. However, our group and others have observed that strain-relaxed epitaxial layers of In1−xGaxAs on GaAs substrates can be grown without the formation of threading dislocations in the epitaxial layer. We have been able to grow strain-relaxed layers up to 13% In concentration without observable densities of threading dislocations in the epilayer but do observe a large number of dislocations pushed into the GaAs substrate. The ability to grow strain-relaxed, lattice-mismatched heteroepitaxial layers has important practical applications. We have succeeded in growing dislocation-free layers of ZnSe on appropriately lattice-matched layers of In1−xGaxAs.



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[1] Chang, K.H., Bhattacharya, P.K., and Gibala, R., J. Appl. Phys, 66, 2993 (1989).
[2] Schowalter, L.J., Taylor, A.P., Xiao, Q.-F., Petruzzello, J., Cammack, D., and Olego, D., Poster Presentation, Spring MRS Meeting (1990).
[3] Krishnamoorthy, V., Ribas, P., and Park, R.M., Appl. Phys. Lett. 58, 2000 (1991).
[4] Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth, 27, 118 (1974).
[5] Fitzgerald, E.A., Ast, D.G., Kirchner, P.D., Pettit, G.D., and Woodall, J.M., J. Appl. Phys, 63, 693 (1988).
[6] Fox, B.A. and Jesser, W.A., J. Appl. Phys, 68, 2801 (1990).
[7] Orders, P.J. and Ushers, B.F., Appl. Phys. Lett. 50, 980 (1987).
[8] Franzosi, P., Salviati, G., Genova, F., Stano, A., and Taiariol, F., Mat. Lett., 3, 425 (1985).
[9] Rozgonyi, G.A., Petroff, P.M., and Panish, M.B., Appl. Phys. Lett. 24, 251 (1974).
[10] LeGoues, F.K., Meyerson, B.S., and Morar, J.M., Phys. Rev. Lett., 22, 2903 (1991).
[11] Matthews, J.W., Blakeslee, A.E., and Mader, S., Thin Solid Films, 33, 253 (1976).
[12] Fitzgerald, E.A., Watson, G.P., Proano, R.E., Ast, D.G., Kirchner, P.D., Pettit, G.D., and Woodall, J.M., J. Appl. Phys, 65, 2220 (1989).
[13] Lefebvre, A., Herbeaux, C., Bouillet, C., and Persio, J. Di, Phil. Mag. Lett., 63, 23 (1991).


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