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Control of the Formation of Zn1-xMgxO Films by Zinc Sulfate Concentration

Published online by Cambridge University Press:  20 March 2013

Hiroki Ishizaki  and
Seishiro Ito
Hiroki Ishizaki
Affiliation:
Department of Electronic System Engineering, Tokyo University of Science Suwa, 5000-1 Toyohira, Chino-shi, Nagano 391-0292, Japan
Seishiro Ito
Affiliation:
Faculty of Science and Engineering, Kinki University, 4-1 Kowakae 3-chome, Higashiosaka, Osaka 577-8502, Japan
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Abstract

Magnesium doped ZnO films were electrochemically grown on the NESA conductive glass substrate from the magnesium nitrate aqueous solution with zinc sulfate, kept at 323K and the cathodic potential of -0.9V vs. Ag/AgCl. The Mg/(Mg+Zn) atomic ratio of Zn1-xMgxO films increased with the decrease in the zinc sulfate concentration. The optical band gap energy of these Zn1-xMgxO films decreased with increasing content of zinc sulfate. Thus, the optical band gap energy and Mg/(Mg+Zn) atomic ratio of Zn1-xMgxO films would depend on the zinc sulfate concentration.

Keywords

electrodepositionII-VIceramic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 83 - 89
Copyright
Copyright © Materials Research Society 2013 

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References

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