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Control of Crystal Orientations and Its Electrical Properties of PZT/Ru and PZT/RuO2 Thin Films by MOCVD

Published online by Cambridge University Press:  02 August 2011

Kazuo Shinozaki ,
Akinori Iwasaki ,
Naoki Wakiya  and
Nobuyasu Mizutani
Kazuo Shinozaki
Affiliation:
Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550, Japan
Akinori Iwasaki
Affiliation:
Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550, Japan
Naoki Wakiya
Affiliation:
Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550, Japan
Nobuyasu Mizutani
Affiliation:
Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550, Japan
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Abstract

Ru and RuO2 thin films were deposited on (100)LaAlO3 (LAO), (100)MgO and (111)Pt/Ir/ SiO2/Si substrates byMOCVD. Pb(Zr,Ti)O3 (PZT) was fabricated on Ru/LAOand RuO2/LAO. Ru thin films deposited at 400°C or higher on LaAlO3 and MgO showed epitaxial (001) crystal orientation. (001) uniaxial Ru was deposited on Pt/Ir/SiO2/Si. RuO2 thin films with (100) orientation were deposited both on LaAlO3 and Pt/Ir/SiO2/Si. (110)-oriented RuO2 thin film was deposited on MgO. Epitaxial RuO2 thin films were deposited on LaAlO3 and MgO at 400°C or higher. The smoothest surfaces and the lowest room-temperature electrical resistivities were obtained at 400°C and 450°C, respectively. The crystal orientations and electrical properties of the PZT thin films deposited on the Ru and RuO2 thin films at 550°C were strongly affected by the crystal orientations and microstructure of the Ru and the RuO2 films. Rhombohedral Pb(Zr0.6Ti0.4)03 thin films deposited on RuO2/LAOand Ru/LAO at 550°C with lower growth rate (1.2nm/min) showed (110) and (001) orientation, respectively. The remanent polarization value (Pr) for (001) PZT on Ru/LAO was ∼70 μC/cm2. (110) PZT on RuO2/LAO showed lower Pr (∼30 μC/cm2), but showed low leakage current (10-9 A/cm2 at 500kV/cm). The dense microstructures and smooth surface structures brought the good leakage characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 768: Symposium G – Integration of Heterogeneous Thin-Film Materials and Devices , 2003 , G3.8
Copyright
Copyright © Materials Research Society 2003

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References

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