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Control of Crystal Orientation of Epitaxial Si nanowires on Si Substrate Using AAO template

  • Tomohiro Shimizu (a1), Qi Wang (a1), Chonge Wang (a1), Fumihiro Inoue (a1), Makoto Koto (a2), Minsung Jeon (a1) and Shoso Shingubara (a1)...

Abstract

Control of crystal orientation of vertically grown epitaxial Si (111) and (110) nanowire arrays on Si substrate has been demonstrated using a combination of an anodic aluminum oxide (AAO) template and vapor – liquid – solid (VLS) growth method. The crystal orientation of the nanowire was investigated by transmission electron microscopy. A growth direction of the nanowire arrays was guided perpendicular to the surface of the substrate by the AAO template, and the crystal orientation of the nanowire arrays was selected using the single crystal Si substrate properly cut in desired orientation.

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1. Schmidt, V., Senz, S., Gösele, U., Nano Lett., 5, 931 (2005).
2. Shimizu, T., Xie, T., Nishikawa, J., Shingubara, S., Senz, S., and Gösele, U., Adv. Mater. 19, 917 (2007)
3. Masuda, H., Nishio, K., Baba, N., J. Mater. Sci. Lett., 13, 338 (1994).

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Control of Crystal Orientation of Epitaxial Si nanowires on Si Substrate Using AAO template

  • Tomohiro Shimizu (a1), Qi Wang (a1), Chonge Wang (a1), Fumihiro Inoue (a1), Makoto Koto (a2), Minsung Jeon (a1) and Shoso Shingubara (a1)...

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