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Contributions of D0 and non-D0 Gap States to the Kinetics of Light Induced Degradation of Amorphous Silicon under 1 sun Illumination

Published online by Cambridge University Press:  17 March 2011

J. Pearce ,
X. Niu ,
R. Koval ,
G. Ganguly ,
D. Carlson ,
R.W. Collins  and
C.R. Wronski
J. Pearce
Affiliation:
Center For Thin Film Devices, The Pennsylvania State University, University Park, PA, 16801
X. Niu
Affiliation:
Center For Thin Film Devices, The Pennsylvania State University, University Park, PA, 16801
R. Koval
Affiliation:
Center For Thin Film Devices, The Pennsylvania State University, University Park, PA, 16801
G. Ganguly
Affiliation:
BP Solar, 3601 Lagrange Parkway, Toano, VA 23168
D. Carlson
Affiliation:
BP Solar, 3601 Lagrange Parkway, Toano, VA 23168
R.W. Collins
Affiliation:
Center For Thin Film Devices, The Pennsylvania State University, University Park, PA, 16801
C.R. Wronski
Affiliation:
Center For Thin Film Devices, The Pennsylvania State University, University Park, PA, 16801
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Abstract

Light induced changes to 1 sun degraded steady state (DSS) have been investigated on hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells and corresponding films fabricated with and without hydrogen dilution of silane. Striking similarities are found for the degradation kinetics, between the electron mobility lifetime (μτ) products and the corresponding fill factors (FF). These correlations that exist for both intrinsic materials at temperatures between 25 and 100°C, are present for the DSS as well as in the kinetics, which exihibit distinctly different dependence on temperature. No such correlations are present between μτ, FF and densities of D0 defects, measured with subgap absorption α(E) at 1.2eV, and electron spin resonance (ESR). The creation of non-D0 defects is also clearly indicated by the temperature dependence of the kinetics and the changes in the shape of α(E) with the results suggesting the presence of more than one mechanism for the creation of light induced defects associated with the Staebler-Wronski effect (SWE).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A12.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Bennett, M., Rajan, K., and Kritikson, K., Conf. Record of 23rd IEEE PVSC (IEEE, 1994), 845, (1994).Google Scholar
2. Yang, J., Xu, X., and Guha, S., Mat. Res. Soc. Symp. Proc., 336, 687 (1994).Google Scholar
3. Lee, Y., Jiao, L., Liu, H., Lu, Z., Collins, R.W., and Wronski, C. R., Conf. Record of 25th IEEE PVSEC (IEEE, 1996), 1165 (1996).Google Scholar
4. Yang, L., and Chen, L., Appl. Phys. Lett., 63, 400 (1993).10.1063/1.110031Google Scholar
5. Gunes, M. and Wronski, C. R., J. Appl. Phys., 81, 3526 (1997).Google Scholar
6. Jiao, L., Liu, H., Semoushikina, S., Lee, Y., and Wronski, C.R., Appl. Phys. Lett. 69, 3713 (1996).Google Scholar
7. Han, D., and Fritzche, H., J. Non-Cryst. Solid. 59–60, 397 (1983).Google Scholar
8. Stradins, P. and Fritzsche, H., Phil. Mag. B 69, 121 (1994).10.1080/13642819408236885Google Scholar
9. Koval, R., Niu, X., Jiao, L., Pearce, J., Ganguly, G., Yang, J., Guha, S., Collins, R. W., Wronski, C. R., Mater. Res. Soc. Symp Proc. 609, A15.5. (2000).10.1557/PROC-609-A15.5Google Scholar
10. Stutzmann, M., Jackson, W. B., and Tsai, C.C., Phys Rev. B32, 23 (1985).Google Scholar
11. Jiao, L., Chen, I., Collins, R.W., Wronski, C.R., and Hata, N., Appl. Phys. Lett., 72, 1057 (1998).Google Scholar
12. Pearce, J. M., Koval, R. J., Ferlauto, A. S., Collins, R. W., Wronski, C. R., Yang, J., and Guha, S., Appl. Phys. Lett. 77, 3093 (2000).Google Scholar
13. Jiao, L., Semoushikiana, S., Lee, Y., and Wronski, C.R., Mater. Res. Soc. Symp. Proc. 467, 97 (1997).Google Scholar
14. Wronski, C. R., Lu, Z., Jiao, L., Lee, Y., Conference Record of the 26th IEEE Photovoltaic Specialists Conference (IEEE NewYork 1997) 587–590 (1997).Google Scholar
15. Stradins, P., Kondo, M., and Matsuda, A., Conf. Record of the 28th IEEE Photovoltaic Specialists Conference (IEEE New York) in press.Google Scholar
16. Roedern, B. von, Appl. Phys. Lett. 62, 1368, (1993).Google Scholar
17. Wronski, C. R., Mat. Res. Soc. Proc., 467, 7 (1997).Google Scholar