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Consequences of Strain and Growth Kinetics on Growth Modes and Dislocation Formation in Strained Layer Epitaxy

Published online by Cambridge University Press:  16 February 2011

Jasprit Singh
Jasprit Singh*
Affiliation:
Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122.
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Abstract

We examine the growth modes of compound semiconductors grown by molecular beam epitaxy in lattice matched and strained layers. While in lattice matched layers it is possible to grow in the layer by layer mode by choosing proper growth conditions, in strained layers we find that for large strain, it is not possible to do so. This is due to the competition between surface strain energy which favors 3D growth and surface chemical energy which favors a layer by layer growth mode. The growth mode is shown to have significant effects on the nature of the dislocations generated beyond critical thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 187
Copyright
Copyright © Materials Research Society 1990

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References

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