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Conductivity of the Granular Metal Films Obtained by High Dose Ion Implantation into Pmma

Published online by Cambridge University Press:  21 February 2011

V.V. Bazarov ,
V.Yu. Petukhov ,
V.A. Zhikharev  and
I.B. Khaibullin
V.V. Bazarov
Affiliation:
Zavoisky Physical Technical institute of Russian academy of Science, Sibirsky Trakt, 10/7, Kazan, 420029, Russian Federation
V.Yu. Petukhov
Affiliation:
Zavoisky Physical Technical institute of Russian academy of Science, Sibirsky Trakt, 10/7, Kazan, 420029, Russian Federation
V.A. Zhikharev
Affiliation:
Zavoisky Physical Technical institute of Russian academy of Science, Sibirsky Trakt, 10/7, Kazan, 420029, Russian Federation
I.B. Khaibullin
Affiliation:
Zavoisky Physical Technical institute of Russian academy of Science, Sibirsky Trakt, 10/7, Kazan, 420029, Russian Federation
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Abstract

Thin granular metal films in polymethylmethacrylate(PMMA) have been synthesized by 40 keV Fe+, ag+ or Pb+ ions implantation with fluencies up to 6*1017 ion/cm2. the resistivity of synthesized films was measured in the temperature range from 300K. to 5K. the temperature dependence of the resistivity of PMMA implanted with ag+, Pb+ and small fluence Fe+ obeys the well known law lnR~(l/T)1/2. the samples implanted by high fluence Fe+ reveal rather a different behaviour. at low temperature (T<100K) the curves R(T) fit the formulae inR~lnT. the two mechanisms of conductivity of a granular film are considered: direct tunneling and thermally activated hopping. Combined with the morphology features of films, obtained by high fluence Fe+ implantation, the above mentioned consideration offers a satisfactory explanation of the observed temperature dependence R(T).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 417
Copyright
Copyright © Materials Research Society 1995

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References

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