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Conductivity Anisotropy in Epitaxial 6H and 4H Sic

  • William J. Schaffer (a1), G. H. Negley (a1), K. G. Irvine (a1) and J. W. Palmour (a1)

Abstract

A measure of the electron mobility anisotropy in n-type 4H and 6H-SiC has been obtained using the Hall effect over the temperature range 80K<T<600K. Hall mobility and resistivity data are collected from appropriately oriented bar patterns fabricated into high quality epitaxial material grown on (1100) or (1120)surfaces having total impurity concentrations 1017-1018 cm-3. The observed mobility ratio for 4H is μ[1120]/[0001] and is independent of temperature. For 6H, the ratio μ[1100]/[0001] decreases from ∼6.2 at 80K to ∼5.0 at 150K and is essentially constant (∼4.8) above 200K. A donor level near 0.6 eV is occasionally observed in 4H which reduces the high temperature electron mobility and introduces an apparent temperature dependence to the mobility ratio if nonuniformly distributed.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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