- Cited by 181
Tornblad, Olof Breitholtz, Bo Östling, Mikael and Lindefelt, Ulf 1994. The influence of emitter properties on the heat generation in SiC and Si PIN diodes under forward conduction. Physica Scripta, Vol. T54, Issue. , p. 60.
Schadt, M. Pensl, G. Devaty, R. P. Choyke, W. J. Stein, R. and Stephani, D. 1994. Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide. Applied Physics Letters, Vol. 65, Issue. 24, p. 3120.
Harima, Hiroshi Nakashima, Shin‐ichi and Uemura, Tomoki 1995. Raman scattering from anisotropic LO‐phonon–plasmon–coupled mode inn‐type 4H– and 6H–SiC. Journal of Applied Physics, Vol. 78, Issue. 3, p. 1996.
Velmre, E. Udal, A. Masszi, F. and Nordlander, E. 1995. Simulation of Semiconductor Devices and Processes. p. 340.
Allen, S.T. Palmour, J.W. Carter, C.H. Weitzel, C.E. Moore, K.E. Nordquist, K.J. and Pond, L.L. 1996. Silicon carbide MESFET's with 2 W/mm and 50% P.A.E. at 1.8 GHz. Vol. 2, Issue. , p. 681.
Yoder, M.N. 1996. Wide bandgap semiconductor materials and devices. IEEE Transactions on Electron Devices, Vol. 43, Issue. 10, p. 1633.
Itoh, A. Kimoto, T. and Matsunami, H. 1996. Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination. IEEE Electron Device Letters, Vol. 17, Issue. 3, p. 139.
Alok, D. and Baliga, B.J. 1996. Nitrogen implanted high voltage, planar, 6H-SiC N/sup +/-P junction diodes. p. 107.
Weitzel, C.E. Palmour, J.W. Carter, C.H. Moore, K. Nordquist, K.K. Allen, S. Thero, C. and Bhatnagar, M. 1996. Silicon carbide high-power devices. IEEE Transactions on Electron Devices, Vol. 43, Issue. 10, p. 1732.
Palmour, J.W. Singh, R. Glass, R.C. Kordina, O. and Carter, C.H. 1997. Silicon carbide for power devices. p. 25.
Shenoy, J.N. Cooper, J.A. and Melloch, M.R. 1997. High-voltage double-implanted power MOSFET's in 6H-SiC. IEEE Electron Device Letters, Vol. 18, Issue. 3, p. 93.
Sridevan, S. McLarty, P.K. and Baliga, B.J. 1997. Analysis of gate dielectrics for SiC power UMOSFETS. p. 153.
Scozzie, C. J. McLean, F. B. and McGarrity, J. M. 1997. Modeling the temperature response of 4H silicon carbide junction field-effect transistors. Journal of Applied Physics, Vol. 81, Issue. 11, p. 7687.
Lades, M. and Wachutka, G. 1997. Extended anisotropic mobility model applied to 4H/6H-SiC devices. p. 169.
Itoh, A. and Matsunami, H. 1997. Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices. physica status solidi (a), Vol. 162, Issue. 1, p. 389.
Itoh, Akira and Matsunami, Hiroyuki 1997. Single crystal growth of SiC and electronic devices. Critical Reviews in Solid State and Materials Sciences, Vol. 22, Issue. 2, p. 111.
Bakowski, M. Gustafsson, U. and Lindefelt, U. 1997. Simulation of SiC High Power Devices. physica status solidi (a), Vol. 162, Issue. 1, p. 421.
Chen, W. M. Son, N. T. Janzén, E. Hofmann, D. M. and Meyer, B. K. 1997. Effective Masses in SiC Determined by Cyclotron Resonance Experiments. physica status solidi (a), Vol. 162, Issue. 1, p. 79.
Raghunathan, R. and Baliga, B.J. 1998. P-type 4H and 6H-SiC high-voltage Schottky barrier diodes. IEEE Electron Device Letters, Vol. 19, Issue. 3, p. 71.
Rodrigues, R.G. Piccone, D.E. Tobin, W.H. Willinger, L.W. Barrow, J.A. Hansen, T.A. Zhao, J. and Cao, L. 1998. Operation of power semiconductors at their thermal limit. Vol. 2, Issue. , p. 942.
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A measure of the electron mobility anisotropy in n-type 4H and 6H-SiC has been obtained using the Hall effect over the temperature range 80K<T<600K. Hall mobility and resistivity data are collected from appropriately oriented bar patterns fabricated into high quality epitaxial material grown on (1100) or (1120)surfaces having total impurity concentrations 1017-1018 cm-3. The observed mobility ratio for 4H is μ/ and is independent of temperature. For 6H, the ratio μ/ decreases from ∼6.2 at 80K to ∼5.0 at 150K and is essentially constant (∼4.8) above 200K. A donor level near 0.6 eV is occasionally observed in 4H which reduces the high temperature electron mobility and introduces an apparent temperature dependence to the mobility ratio if nonuniformly distributed.
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