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Concentration-Dependent Hydrogen Diffusivity in a-Si:H

Published online by Cambridge University Press:  21 February 2011

Paulo V. Santos  and
Warren B. Jackson
Paulo V. Santos
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA94304
Warren B. Jackson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA94304
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Abstract

We present experimental evidence for an enhancement in hydrogen diffusivity in a-Si:H with hydrogen concentration. The concentration dependence is attributed to the saturation of the density of hydrogen traps consisting of Si-H bonds with increasing hydrogen concentration. As a consequence, hydrogen lifetime in mobile interstitial and/or bond-center sites is enhanced. The saturation occurs when the rate of trap filling by hydrogen injection from the plasma exceeds the rate of trap creation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 425
Copyright
Copyright © Materials Research Society 1992

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References

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