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Computer Simulation of Surface Diffusion of Silicon and Carbon Adatoms on SiC(001)

  • Q. A. Bhatti (a1), G. J. Moran (a1) and C. C. Matthai (a1)

Abstract

We have performed molecular dynamics simulations of adatom diffusion on the SiC(001) surface and found that the barriers for carbon adatoms is less than that for silicon adatoms. The diffusion paths were also found to be temperature dependent and at high temperatures the adatom diffusion constant was found to of the order of 10−5 cm2 s−1.

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