Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-24T08:39:17.213Z Has data issue: false hasContentIssue false
  • English
  • Français

Computer Analysis of the Eaton ICB Source

Published online by Cambridge University Press:  28 February 2011

D. E. Turner  and
H. R. Shanks
D. E. Turner
Affiliation:
Microelectronics Research Center, 1925 Scholl Rd., Ames, Iowa 50011
H. R. Shanks
Affiliation:
Microelectronics Research Center, 1925 Scholl Rd., Ames, Iowa 50011
Get access

Abstract

A computer simulation that includes the space charge of electrons and ions has been done for the Eaton ionized cluster beam source in order to better understand how the potential fields affect film deposition. It is found that the space charge effects dominate the dynamics of the ionized clusters, painting a picture that differs radically from what the Laplace fields predict.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 206: Symposium G – Clusters and Cluster-Assembled Materials , 1990 , 297
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Takagi, Toshinori, Ionized-Cluster Beam Deposition and Epitaxy, (Noyes Publications, New Jersey, 1988), page 46 Google Scholar