Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-24T20:50:11.795Z Has data issue: false hasContentIssue false
  • English
  • Français

Computer Aided Synchrotron White Beam X-Ray Topographic Analysis of Multipolytype SiC Device Configurations

Published online by Cambridge University Press:  15 February 2011

W. Huang ,
S. Wang ,
M. Dudley ,
P. Neudeck ,
J. A. Powell  and
C. Fazi
W. Huang
Affiliation:
Dept. of Materials Science and Engineering, SUNY at SB, Stony Brook, NY11794–2275
S. Wang
Affiliation:
Dept. of Materials Science and Engineering, SUNY at SB, Stony Brook, NY11794–2275
M. Dudley
Affiliation:
Dept. of Materials Science and Engineering, SUNY at SB, Stony Brook, NY11794–2275
P. Neudeck
Affiliation:
Dept. of Materials Science and Engineering, SUNY at SB, Stony Brook, NY11794–2275
J. A. Powell
Affiliation:
NASA Lewis Research Center, 21000 Brookpark Road, MS 77–1, Cleveland, Ohio 44135
C. Fazi
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA
Get access

Abstract

SiC device configurations comprising various polytypes have been analyzed using synchrotron white beam x-ray topography with the aid of computer simulation. Diffracted intensity maps for the various polytypes and their combinations in various diffraction geometries, including transmission, reflection, grazing-reflection and back-reflection are generated. This method is used to determine the structures of SiC devices fabricated via CVD epilayer growth of nominally 3C-SiC or 6H-SiC, or 6H-SiC substrates grown by the Lely technique. The work indicates that those devices which were initially considered to be of 3C structure also contain some 6H structure. Defect structures associated with the polytype configurations are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 375: Symposia AA – Applications of Synchrotron Radiation Techniques to Materials Science , 1994 , 327
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. O'Connor, J. R. and Smilten, J., eds., Silicon Carbide, A High Temperature Semiconductor., Pergamon, Oxford, 1960 Google Scholar
2. Verma, A. R. and Krishna, P., Polymorphism and Polytypism in Crystals., John Wiley &Sons, New York, 1966 Google Scholar
3. Neudeck, P. G., Larkin, D. J., et al, IEEE Electron Device Letters, 14, 136, (1993)Google Scholar
4. Yao, G., Dudley, M. and Wu, J., J. X-ray Sci. Tech., 2, 195 (1990)Google Scholar
5. Dudley, M., Wu, J. and Yao, G.-D., Nucl. Instrum. Methods. Phys. Res. Sect. B40/41, 388 (1989)Google Scholar
6. Fisher, G. R. and Barnes, P., J. Appl. Cryst., 17, 231 (1984)Google Scholar
7. Miltat, J. and Dudley, M., J. Appl. Cryst., 10, 281 (1977)Google Scholar
8. Miltat, J., in Characterization of Crystal Growth Defects by X-ray Methods, Tanner, G. R. and Bowen, D. K., eds, Plenuum Press, 1980 Google Scholar
9. Yoo, W. S. and Matsunami, H., in Amorphous and Crystalline Sillicon Carbide IV, Springer Proceedings in Physics, Yang, C. Y., Rahman, M. M. and Harris, G. L., eds, 71, 66 (1992)Google Scholar
10. Powell, J. A., Larkin, D. J., et al, in Amorphous and Crystalline Sillicon Carbide IV, Springer Proceedings in Physics, Yang, C. Y., Rahman, M. M. and Harris, G. L., eds, 71, 23 (1992)Google Scholar