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Comprehensive Reactor-Scale Modeling of III-V Ternary Compound Growth by Movpe

  • E.V. Yakovlev (a1), R.A. Talalaev (a1), S. Yu. Karpov (a1), Yu.A. Shpolyanskiy (a2), Yu.N. Makarov (a3) and S.A. Lowry (a4)...

Abstract

A novel quasi-thermodynamic approach is suggested to simulate surface chemistry in III-V compound MOVPE. Blocking of free adsorption sites by methyl radicals is considered as the mechanism limiting the growth rate at low temperatures. This assumption has provided a good reproduction of experimental data on GaAs MOVPE in various types of reactor. The commercial computational fluid dynamics software CFD-ACE™ has been used to perform a detailed threedimensional modeling of AlGaAs and InGaP deposition in an AIX-200 horizontal reactor. The surface model has been incorporated into the code to obtain the growth rate and layer composition distributions over the substrate. Modeling results demonstrate a reasonable agreement with experimental data.

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Comprehensive Reactor-Scale Modeling of III-V Ternary Compound Growth by Movpe

  • E.V. Yakovlev (a1), R.A. Talalaev (a1), S. Yu. Karpov (a1), Yu.A. Shpolyanskiy (a2), Yu.N. Makarov (a3) and S.A. Lowry (a4)...

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