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Compositional Analysis and Electrical Property Measurements of CW Laser-Annealed InSb

Published online by Cambridge University Press:  15 February 2011

Yung S. Liu
Affiliation:
General Electric Research and Development Center, Schenectady, New York 12345, USA
C.Y. Wei
Affiliation:
General Electric Research and Development Center, Schenectady, New York 12345, USA
W. Tantraporn
Affiliation:
General Electric Research and Development Center, Schenectady, New York 12345, USA
S.W. Chiang
Affiliation:
General Electric Research and Development Center, Schenectady, New York 12345, USA
G.E. Possin
Affiliation:
General Electric Research and Development Center, Schenectady, New York 12345, USA
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Abstract

Characteristics of CW Ar-ion laser annealed InSb has been studied; properties include stoichiometric composition analysis and electrical C-V measurements. The stoichiometry compositions of laser-annealed samples at different power levels and scan speeds have been studied using an electron microprobe technique. Results were compared with electrical C-V measurements using MOS structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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