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Composition dependent doping and transport properties of CuGaSe2

  • Susanne Siebentritt (a1), Andreas Gerhard (a1), Stephan Brehme (a1) and Martha Ch. Lux-Steiner (a1)

Abstract

Chalcopyrites are doped by intrinsic defects, therefore their doping behavior depends on their composition. The doping and transport properties of epitaxial CuGaSe2 layers prepared under varying Cu excess have been investigated by temperature dependent Hall effect and conductivity measurements. Two acceptors, 134 meV and 80 meV deep, and a high degree of compensation, increasing with decreasing Cu excess, are found. The temperature dependence of the mobility indicates scattering with phonons, demonstrating high quality material. Defect scattering dominates at lower temperatures for CuGaSe2 grown under moderate Cu excess. CuGaSe2 grown under little or no Cu excess shows transport in a defect band at lower temperatures.

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COPYRIGHT: © Materials Research Society 2001

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[1] Mikkelsen, J. C. Jr, J. Electronic Materials 10 (3), 541 (1981).
[2] Bauknecht, A., Siebentritt, S., Albert, J., and Lux-Steiner, M. C., J. Appl. Phys. 89, in press (2001).
[3] Susaki, M., Miyauchi, T., Horinaka, H., and Yamamoto, N., Jpn. J. Appl. Phys. 17 (9), 1555 (1978).
[4] Schön, J. H., Schenker, O., Riazi-Nejad, H., Friemelt, K., Kloc, C., and Bucher, E., phys. stat. sol. a 161, 301 (1997).
[5] Schön, J. H., Fess, K., Friemelt, K., Kloc, C., and Bucher, E., Inst. Phys. Conf. Ser. 152, 59 (1997).
[6] Yamada, A., Fons, P., Niki, S., Shibata, H., Obara, A., Makita, Y., and Oyanagi, H., J. Appl. Phys. 81 (6), 2794 (1997).
[7] Bauknecht, A., Blieske, U., Kampschulte, T. et al., presented at the 2nd World Conference and Exhibiton on Photovoltaic Solar Energy Conversion, Vienna, 1998, p. 2436.
[8] Bauknecht, A., Blieske, U., Kampschulte, T., Bruns, J., Diesner, K., Tomm, Y., Chichibu, S., and Lux-Steiner, M.-C., Inst. Phys. Conf. Ser. 152, 269 (1998).
[9] Siebentritt, S., Bauknecht, A., Gerhard, A., Fiedeler, U., Kampschulte, T., Schuler, S., Harneit, W., Brehme, S., Albert, J., and Lux-Steiner, M. C., Solar Energy Mat. Solar Cells 67, 129 (2001).
[10] Gerhard, A., Harneit, W., Brehme, S., Bauknecht, A., Fiedeler, U., Lux-Steiner, M.-C., and Siebentritt, S., Thin Solid Films 387, 67 (2001).
[11] Ridley, B. K., “Quantum processes in semiconductors” (Oxford University Press, Oxford, 1993), pp. 238–241.
[12] Shklovskii, B. I. and Efros, A. L., “Electronic Properties of Doped Semiconductors” (Springer-Verlag, Berlin, 1984), pp. 75–82.
  • Cited by 13

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Composition dependent doping and transport properties of CuGaSe2

  • Susanne Siebentritt (a1), Andreas Gerhard (a1), Stephan Brehme (a1) and Martha Ch. Lux-Steiner (a1)

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