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Composition Dependence of Hardness and Moduli in GeSi/Si-Heterostructures Measured by Nanoindentation

Published online by Cambridge University Press:  21 February 2011

B. S. Roos ,
H. Richter ,
T. Morgenstern  and
B. Tillack
B. S. Roos
Affiliation:
Institut für Halbleiterphysik, Walter-Korsing-Str. 2, D–15230 Frankfurt (Oder), Germany
H. Richter
Affiliation:
Institut für Halbleiterphysik, Walter-Korsing-Str. 2, D–15230 Frankfurt (Oder), Germany
T. Morgenstern
Affiliation:
Institut für Halbleiterphysik, Walter-Korsing-Str. 2, D–15230 Frankfurt (Oder), Germany
B. Tillack
Affiliation:
Institut für Halbleiterphysik, Walter-Korsing-Str. 2, D–15230 Frankfurt (Oder), Germany
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Abstract

GexSi1-x layers (0 ≤ × ≤ 1), with thicknesses ranging from 0.1 to 1.2 µm, were grown on Si(100) and Si(lll) by chemical vapor deposition (APCVD, LP/RTCVD) and liquid phase epitaxy (LPE), respectively. A NanoTest 500 machine served for nanoindentation measurements to evaluate the hardness and elastic moduli. The GeSi layers show strong alloy hardening with an increase varying proportional to x(l-x) as reported for III-V and H-VI-semiconductors. Maximum hardness is close to x = 0.45 at one and a half of the silicon hardness. For binary alloys such as Ge-Si, which show complete solid solubility, the elastic moduli are generally assumed to vary linearly with composition. In contrast to that we found for the indentation modulus E/(l-v2) a positive deviation of 30 % from linear interpolation (Vegard’s law), proportional to x(l-x). The increase in the elastic constants is explained by the structural properties of the Ge-Si alloy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 277
Copyright
Copyright © Materials Research Society 1995

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