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Composition Control of Lead or Bismuth Based Ferroelectric Thin Films Prepared by Sputtering Method

Published online by Cambridge University Press:  15 February 2011

K. Yamakawa ,
S. Trolier-McKinstry  and
J. P. Dougherty
K. Yamakawa
Affiliation:
Intercollege Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802 (USA)
S. Trolier-McKinstry
Affiliation:
Intercollege Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802 (USA)
J. P. Dougherty
Affiliation:
Intercollege Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802 (USA)
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Abstract

Composition control in lead or bismuth based ferroelectric thin films was studied for rf magnetron, dc magnetron and ion beam sputter depositions with metal or oxide targets. For room temperature depositions, (1) control of the target surfaces, (2) suppression of harmful effects from negative ions and (3) control of oxygen content in the films were significant. The surface of the lead target gradually degrades and alters the lead flux extracted from the target. At low pressures resputtering from the film occurs by negative oxygen ions. It is necessary to put more oxygen into the films in the sputter depositions with metal targets and the ion beam sputter depositions. For high temperature depositions, a composition self control was observed for films deposited in excess lead environments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 591
Copyright
Copyright © Materials Research Society 1996

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References

1. Fox, G.R., Krupanidhi, S.B., More, K.L. and Allard, L.F., J.Mater.Res., 7 (11), 3039 (1992)Google Scholar
2. Fox, G.R., Krupanidhi, S.B. and More, K.L., J.Mater.Res., 8 (9), 2191 (1993)Google Scholar
3. Fox, G.R., Krupanidhi, S.B., J.Mater.Res., 8 (9), 2203 (1993)Google Scholar
4. Krupanidhi, S.B., Hu, H. and Kumar, V., J.Appl.Phys., 71, 376 (1992)Google Scholar
5. Singh, R., J.Appl.Phys., 63, R59 (1988)Google Scholar
6. Messier, R. and Kester, D.J., Appl.Surf Sci., 22/23, 111 (1985).Google Scholar
7. Kester, D.J. and Messier, R., J.Vac.Sci.Technol., A 4 (3), 496 (1986)Google Scholar
8. Kester, D.J. and Messier, R., J.Mater.Res., 8 (8), 1928 (1993)Google Scholar