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Comparison of Prolonged Light Soaking of Single and Stacked Junction A-SI:H Solar Cells

Published online by Cambridge University Press:  25 February 2011

P. Lechner ,
B. Scheppat ,
R. Geyer ,
H. Rübel ,
M. Gorn  and
N. Kniffler
P. Lechner
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
B. Scheppat
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
R. Geyer
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
H. Rübel
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
M. Gorn
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
N. Kniffler
Affiliation:
Phototronics Solartechnik GmbH (PST), D-8011 Putzbrunn, FRG
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Abstract

Light-induced degradation of a-Si solar cells is dependent on their design. The degradation rate for single cells increases with i-layer thickness. Very thin i-layer devices (d < 100 nm) exhibit a delayed onset of degradation which is accompanied by a severe loss of open circuit voltage at prolonged exposure times. By extrapolating i-layer thickness to zero and therefore separating bulk and interface effects, the latter may account for a substantial loss of stability. The introduction of a SiC buffer layer at the p/i interface results in a considerable higher degradation mainly caused by a loss in fill factor.

Double stacked cells, as compared to single cells having similar initial efficiences, show higher stability. The instability at extended exposure times of very thin single cells as used in a tandem configuration did not influence the stacked device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 583
Copyright
Copyright © Materials Research Society 1989

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References

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