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A Comparison of Millisecond Annealing of B Implants and Isothermal Annealing for Times of a Few Seconds

Published online by Cambridge University Press:  25 February 2011

R. A. Mcmahon ,
D. G. Hasko ,
H. Ahmed ,
W. M. Stobbs  and
D. J. Godfrey
R. A. Mcmahon
Affiliation:
Microcircuit Engineering Laboratory, Cambridge University, Cambridge Science Park, Cambridge, CB4 4BH, U.K.
D. G. Hasko
Affiliation:
Microcircuit Engineering Laboratory, Cambridge University, Cambridge Science Park, Cambridge, CB4 4BH, U.K.
H. Ahmed
Affiliation:
Microcircuit Engineering Laboratory, Cambridge University, Cambridge Science Park, Cambridge, CB4 4BH, U.K.
W. M. Stobbs
Affiliation:
Department of Metallurgy and Materials Science, Pembroke Street, CambridgeCB2 3QZ, U.K.
D. J. Godfrey
Affiliation:
GEC, Hirst Research Centre, East Lane, Wembley, MiddlesexHA9 7PP, U.K.
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Abstract

The annealing behaviour of B implants in the millisecond time regime using a combination of swept line beam and background heating is compared with isothermal annealing with heating cycles of a few seconds. Carrier concentration profiles derived from spreading resistance measurements show that under annealing conditions which restrict diffusion, millisecond processing gives higher activation of B implants than isothermal heating. Transmission electron microscopy shows that millisecond annealing also results in a lower defect density than that following an equivalent isothermal anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 347
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. McMahon, R. A., Davis, J.R. and Ahmed, H. in Laser and Electron Beam Solid Interactions, eds. Gibbons, J. F. Hess, L.D. and Sigmon, T.W., New York: North Holland (1981).Google Scholar
2. McMahon, R.A., Ahmed, H., Godfrey, D.J. and Yallup, K.J., IEEE, Trans. ED 30, 1550 (1983).Google Scholar
3. Sedgwick, T.O., Proc. Electrochem. Soc. 82 (7),130 (1982).Google Scholar
4. McMillan, G.B., Shannon, J.H. and Ahmed, H., Electron. Lett. 20 (1984).Google Scholar
5. Knapp, J.A. and Picraux, S.T., Appl. Phys. Lett. 38, 873, (1981).Google Scholar
6. Yu, T., Soda, K.J., Streetman, B.C., J. Appl. Phys. 51, 4399 (1980).Google Scholar
7. Pawlik, M. in Semiconductor Processing ASTM STP850 ed. Dinesh Gupta, C., American Society for Testing Materials (1984).Google Scholar
8. Godfrey, D.J., McMahon, R.A., Hasko, D.G., Ahmed, H. and Dowsett, M.G. to be published in Impurity Diffusion and Gettering in Semiconductors, Proceedings of the Materials Research Society, Fall Meeting 1984, Boston, Mass.Google Scholar