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A Comparison of Millisecond Annealing of B Implants and Isothermal Annealing for Times of a Few Seconds

  • R. A. Mcmahon (a1), D. G. Hasko (a1), H. Ahmed (a1), W. M. Stobbs (a2) and D. J. Godfrey (a3)...

Abstract

The annealing behaviour of B implants in the millisecond time regime using a combination of swept line beam and background heating is compared with isothermal annealing with heating cycles of a few seconds. Carrier concentration profiles derived from spreading resistance measurements show that under annealing conditions which restrict diffusion, millisecond processing gives higher activation of B implants than isothermal heating. Transmission electron microscopy shows that millisecond annealing also results in a lower defect density than that following an equivalent isothermal anneal.

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