Skip to main content Accessibility help
×
Home

A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy

  • A.J. Ptak (a1), T.H. Myers (a1), Lijun Wang (a1), N.C. Giles (a1), M. Moldovan (a2), C.R. Da Cunha (a2), L.A. Hornak (a2), C. Tian (a3), R. A. Hockett (a3), S. Mitha (a3) and P. Van Lierde (a3)...

Abstract

Step-doped structures of both magnesium and beryllium were grown in GaN and analyzed using secondary ion mass spectrometry. Dopant incorporation was studied as a function of substrate temperature and dopant flux for Ga-polarity and N-polarity GaN. Incorporation is different for each polarity, with Mg incorporating by up to a factor of 20 times more (30 times more with atomic hydrogen) on the Ga-face, while Be incorporates more readily on the N-face. The effect of atomic hydrogen on the incorporation kinetics of both Mg and Be is also discussed. Mg and Be both undergo surface segregation during growth. Photoluminescence measurements suggest that Be is a p-type dopant with an optical activation energy of approximately 100 meV.

Copyright

References

Hide All
1. Guha, S., Bojarczuk, N. A. and Cardone, F., Appl. Phys. Lett. 71, 1685 (1997).
2. Cheng, T.S., Novikov, S.V., Foxon, C.T., and Orton, J.W., Solid State Comm. 109, 439 (1999).
3. Myers, T.H., Hirsch, L.S., Romano, L.T., and Richards-Babb, M.R., J. Vac. Sci. Technol. B16, 2261 (1998)
4. Smith, A.R., Ramachandran, V., Feenstra, R.M., Greve, D.W., Ptak, A., Myers, T., Sarney, W., Salamanca-Riba, L., Shin, M. and Skowronski, M., MRS Internet J. Nitride Semicond. Res. 3, 12 (1998).
5. Tarsa, E.J., Heying, B., Wu, X.H., Fini, P., DenBaars, S.P., and Speck, J.S., J. Appl. Phys. 82, 5472 (1997).
6. Li, L.K., Jurkovic, M.J., Wang, W.I., Hove, J.M. Van, and Chow, P.P., Appl. Phys. Lett. 76, 1740 (2000).
7. Romano, L.T., Northrup, J.E., Ptak, A.J. and Myers, T.H. Appl. Phys. Lett. 77, 2479 (2000).
8. Ramachandran, V., Feenstra, R. M., Sarney, W. L., Salamanca-Riba, L., Northrup, J. E., Romano, L. T. and Greve, D. W., Appl. Phys. Lett. 75, 808 (1999).
9. Orton, J.W., Foxon, C.T., Cheng, T.S. Hooper, S.E., Novikov, S.V., Ber, B. Ya. and Kudriavtsev, Yu. A., J. Cryst. Growth 197, 7 (1999).
10. Ramachandran, V., Feenstra, R. M., Northrup, J. E., and Greve, D. W., MRS Internet J. Nitride Semicond. Res. 5S1, W3.65 (2000).
11. Bungaro, C., Rapcewicz, K., and Bernholc, J., Phys. Rev. B 59, 9771 (1999).
12. Neugebauer, J. and Walle, C. G. Van de, Phys. Rev. Lett. 75, 4452 (1995).
13. Skromme, B.J. and Martinez, G.L., MRS Internet J. Nitride Semicond. Res. 5S1, W9.8 (2000).
14. Sanchez, F.J., Calle, F., Sanchez-Garcia, M.A., Calleja, E., Munoz, E., Molloy, C.H., Somerford, D.J., J.J. Serrano and Blanco, J.M., Semicond. Sci. Technol. 13, 1130 (1998).
15. Salvador, A., Kim, W., Atkas, O., Botchkarev, A., Fan, Z. and Morkoc, H., Appl. Phys. Lett. 69, 2692(1996).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed