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Comparison of Low Temperature Photoluminescence of Bulk MBE Grown AlGaAs and GaAs Using a Graphite Generated Dimerb Versus a Standard Tetramer Arsenic Group-V Source

Published online by Cambridge University Press:  26 February 2011

Thomas M. Brennan ,
B. E. Hammons ,
M. C. Smith  and
E. D. Jones
Thomas M. Brennan
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
B. E. Hammons
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
M. C. Smith
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
E. D. Jones
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

The carbon concentrations in GaAs and AIGaAs grown by Molecular Beam Epitaxy (MBE) have been studied when a graphite generated dimeric arsenic species and a standard tetramer arsenic species are used as the group-V source. Photoluminescence and Van der Pauw-Hall measurements have been made to examine the material quality in reference to which arsenic species is used for film growth. Results indicate that a graphite crucible arrangement for the thermal cracking of As4 produces significant carbon contamination and is unacceptable for the MBE growth of GaAs and AlGaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 179
Copyright
Copyright © Materials Research Society 1988

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References

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