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Comparison of Growth and Strain Relaxation of Si/Ge Superlattices Under Compressive and Tensile Strain Field

Published online by Cambridge University Press:  22 February 2011

Werner Wegscheider ,
Karl Eberl ,
Gerhard Abstreiter ,
Hans Cerva  and
Helmut Oppolzer
Werner Wegscheider
Affiliation:
Walter Schottky Institut, Technische Universität Munchen, Am Coulombwall, D-8046 Garching, Federal Republic of Germany
Karl Eberl
Affiliation:
Walter Schottky Institut, Technische Universität Munchen, Am Coulombwall, D-8046 Garching, Federal Republic of Germany
Gerhard Abstreiter
Affiliation:
Walter Schottky Institut, Technische Universität Munchen, Am Coulombwall, D-8046 Garching, Federal Republic of Germany
Hans Cerva
Affiliation:
Siemens AG, Research Laboratories, Otto Hahn Ring 6, D-8000 MUnchen 83, Federal Republic of Germany
Helmut Oppolzer
Affiliation:
Siemens AG, Research Laboratories, Otto Hahn Ring 6, D-8000 MUnchen 83, Federal Republic of Germany
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Abstract

Optimization of growth parameters of short period Si/Ge superlattices (SLs) has been achieved via in situ low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) measurements during homo- and heteroepitaxy on Si (001) and Ge (001) substrates. Transmission electron microscopy (TEM) reveals that pseudomorphic SimGe12-m (m = 9 and 3 for growth on Si and Ge, respectively) SLs with extended planar layering can be prepared almost defect-free by a modified molecular beam epitaxy (MBE) technique. Whereas the SLs on Ge can be deposited at a constant substrate temperature, high-quality growth on Si demands for temperature variations of more than 100°C within one superlattice period. Strain relaxation of these SLs with increasing number of periods has been directly compared by means of TEM. For the compressively strained structures grown on Si we found misfit dislocations of the type 60° (a/2)<110>. Under opposite strain conditions i.e. for growth on Ge, strain relief occurs only by microtwin formation through successive glide of 90° (a/6)<211> Shockley partial dislocations. This is consistent with a calculation of the activation energy for both cases based on a homogeneous dislocation nucleation model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 135
Copyright
Copyright © Materials Research Society 1991

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References

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