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Comparison of Different Thickness Measurements of Oxide Films on Silicon

Published online by Cambridge University Press:  25 February 2011

Shou-Chen Kao  and
Robert H. Doremus
Shou-Chen Kao
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
Robert H. Doremus
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
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Abstract

The thermal oxidation of silicon in dry oxygen is examined with three different thickness measurements: Ellipsometry, transmission electron microscopy and step-profile measurements. The oxidation kinetics follow a linear-parabolic relationship throughout the measured thickness range. Previous deviations from linear-parabolic behavior result from inaccurate ellipsometer measurements of film thickness for films thinner than 0.05 /zm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 611
Copyright
Copyright © Materials Research Society 1992

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References

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