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Comparison of Amorphous and Polycrystalline Tungsten Nitride Diffusion Barrier for MOCVD-Cu Metallization

  • Chul Soon Kwon (a1), Dong Joon Kim (a2), Chang Woo Lee (a3), Yong Tae Kim (a3) and In-Hoon Choi (a4)...

Abstract

An amorphized tungsten nitride diffusion barrier is compared with that of polycrystalline tungsten nitride preventing the diffusion of copper into Si during post annealing processes at 600 – 800 °C for 30 min. Experimental evidence such as RBS, TEM, XRD measurements shows that the amorphized tungsten nitride layer perfectly blocks the expeditious diffusion of the Cu film due to the amorphous grain boundaries stuffed with N impurities.

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