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Comparison of 500nm InGaN/GaN QW Emission Properties Induced by Piezoelectric Field Effect and Phase Separation

  • Bong Kee (a1), J.M. Koh (a2) and Euijoon Yoon (a1)

Abstract

Two kinds of InGaN/GaN single quantum well with emission wavelength of 500nm were obtained by employing piezoelectric effect and phase separation with different growth methods. Their emission properties are studied by measuring temperature and photo-excitation power dependent photoluminescence and electrolluminescence. The 500nm luminescence from the sample obtained by piezoelectric effect shows very weak temperature and excitation power dependent, on the other hand, it shows profound band tail broadening at both high temperature and low excitation power for phase separated sample which mean the strong localized state exist. We observed highly bright spots with longer wavelength then that of matrix in the phase separation sample and we believe that high emission efficiency can be obtained from these indium rich clusters.

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Comparison of 500nm InGaN/GaN QW Emission Properties Induced by Piezoelectric Field Effect and Phase Separation

  • Bong Kee (a1), J.M. Koh (a2) and Euijoon Yoon (a1)

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