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Comparison Between Homo-And Hetero-Epitaxial Layers by Photoreflectance Spectroscopy

Published online by Cambridge University Press:  26 February 2011

K.L. Jiao ,
Z.Q. Shi  and
Wa. Anderson
K.L. Jiao
Affiliation:
Center for Electronic & Electro-optic Materials, Department of Electrical & Computer Engineering, State University of New York at Buffalo, Amherst, NY 14260
Z.Q. Shi
Affiliation:
Center for Electronic & Electro-optic Materials, Department of Electrical & Computer Engineering, State University of New York at Buffalo, Amherst, NY 14260
Wa. Anderson
Affiliation:
Center for Electronic & Electro-optic Materials, Department of Electrical & Computer Engineering, State University of New York at Buffalo, Amherst, NY 14260
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Abstract

MOCVD grown GaAs and InP epitaxial layers have been studied using photoreflectance spectroscopy. Homogeneous and heterogeneous structures were employed to investigate the influence of the mismatch induced strain and dislocations. All the tested spectra contained a sharp peak related to the fundamental absorption edge and a pronounced Franz-Keldysh oscillation. The data analysis revealed a consistent difference in bandgap, temperature coefficients of the bandgap, and surface electric field, in the order of the degree of mismatch. For GaAs/GaAs and GaAs/Si samples, the bandgaps derived from the three point method were 1.436 and 1.324eV, respectively. Values of 1.334, 1.325, and 1.294 eV for the bandgap were found for InP/InP, InP/GaAs, and InP/GaAs/Si, respectively. For GaAs epitaxial layers, the intensity of the surface field bore a ratio of 1.18:1 between GaAs and Si substrates. For InP epitaxial layers, the ratio was 1.23:1.12:1 in the sequence of InP, GaAs, and GaAs/Si substrates. Such a measure must be related to the mismatch in the heteroepitaxy structures. A shoulderlike peak, 18-23 meV below the gap-energy peak (Eo), was found for GaAs samples, which could be impurity related. A broad shoulder-like peak 30 meV below the fundamental absorption edge was also observed only for InP/GaAs/Si and hence attributed to some shallow defect levels induced by antiphase disorder.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 713
Copyright
Copyright © Materials Research Society 1991

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References

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