Hostname: page-component-76fb5796d-25wd4 Total loading time: 0 Render date: 2024-04-26T01:19:00.965Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparative Study of Light-Emitting Porous Silicon Anodized with Light Assistance and in the Dark

Published online by Cambridge University Press:  25 February 2011

L. Tsybeskov ,
C. Peng ,
S.P. Duttagupta ,
E. Ettedgui ,
Y. Gao ,
P.M. Fauchet  and
G.E. Carver
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
C. Peng
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
S.P. Duttagupta
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
E. Ettedgui
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627
Y. Gao
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627
P.M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
G.E. Carver
Affiliation:
AT&T Bell Laboratories, Princeton, NJ 08540
Get access

Abstract

In this study, we compare two different types of light emitting porous silicon (LEpSi) samples: LEpSi anodized in the dark (DA) and LEpSi anodized with light assistance (LA). On the basis of photoluminescence (PL), Raman, FTIR, SEM, spatially resolved reflectance (SRR) and spatially resolved photoluminescence (SRPL) studies, we demonstrate that the luminescence in LA porous silicon is strong, easily tunable, very stable and originates from macropore areas. These attractive properties result from passivation by oxygen in the Si-O-Si bridging configuration that takes place during electrochemical anodization. In addition, we have been able to correlate light emission with the presence of crystalline silicon nanograins.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 307
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

references

1. Vial, J.C., Bsiesy, A., Gaspard, F., Herino, R., Legion, M., Muller, F., Romenstain, R., Phys. Rev. B 45, 14171 (1992).Google Scholar
2. Yamada, M. and Kondo, K., Jpn. J. Appl. Phys. 31, L993 (1992).Google Scholar
3. Petrova-Koch, V., Muschik, T., Kux, A., Meyer, B.K., Koch, F. and Lehman, V., Appl. Phys. Lett. 61, 943 (1992)Google Scholar
4. Ettedgui, E., Peng, C., Tsybeskov, L., Gao, Y., Fauchet, P.M., Carver, G.A. and Mizes, H.A., Mat. Res. Soc. Symp. Proc. 283, 173 (1993)Google Scholar
5. Steiner, P., Kozlowski, F., Sandmaier, H. and Lang, W., Mat. Res. Soc. Symp. Proc. 283, 343 (1993)Google Scholar
6. Lehmann, V. and Gosele, U., Mat. Res. Soc. Symp. Proc. 283, 27 (1993)Google Scholar
7. AIP Conf. Proc. 234, edited by Stafford, D.L. (AIP, New York, 1991)Google Scholar
8. Fauchet, P.M. and Campbell, I.H., Crit. Rev. Solid State Mat. Sci. 14, S79 (1988); Mat. Res. Soc. Symp. Proc. 164, 259 (1990); I.H. Campbell and P.M. Fauchet, Solid State Commun. 58, 739 (1986)Google Scholar
9. Galeener, F.L., Phys. Rev. B 19, 4292 (1979).Google Scholar
10. Tsai, C., Li, K.-H. and Campbell, J.C., Journ. Electron. Mat. 21, 589 (1992)Google Scholar
11. Debauche, C., Licoppe, C., Ficstein, J., Dulac, O., Devine, R.A.B.. Appl. Phys. Lett. 61, 306, (1992)Google Scholar
12. Tsybeskov, L., to be publishedGoogle Scholar