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Comparative Study of Interface Structure in GaAs/AlAs Superlattices By Tem and Raman Scattering

  • T. Nakamura (a1), M. Ikeda (a1), S. Muto (a1), S. Komiya (a1) and I. Umebu (a1)...

Abstract

Transition layers in GaAs/AlAs superlattices were studied by high resolution transmission electron microscopy (HRTEM) observations and Raman scattering measurements. We clarified that arrays of bright spots at the interface in the TEM image is a good indicator of the interfacial configuration and that a high atomic step density with intervals of less than 10 nm is necessary for Raman characterization using confined LO phonons.

We characterized the growth temperature dependence of the transition layers at the GaAs/AlAs interfaces. For a sample grown at 500'C, the extent of the transition layers is about one monolayer and that of the interfacial step intervals is more than 10 nm. For a sample grown at 700 0 C, these values are about two monolayers and less than 3 nm, respectively.

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1. Yokoyama, N., Imamura, K., Muto, S., Hiyamizu, S., and Nishi, H., Jpn. J. Appl. Phys. 24, L853(1985).
2. Yao, Y., Jpn. J. Appl. Phys. 22, L680(1983).
3. Jusserand, B., Alexandre, F., Paquet, D., and Roux, G. L., Appl. Phys. Lett. 47, 301(1985).
4. Tanaka, M., Sakaki, H., and Yoshino, J., Jpn. J. Appl. Phys. 24, L41(1985).
5. Petroff, P. M., Gossard, A. C., Savage, A., and Wiegmann, W., J. Cryst. Growth, 44, 5(1978).
6. Kuan, T. S. in Electron Microscopy of Materials, edited by Krakow, W., Smith, D., and Hobbs, L. W. (Mater. Res. Soc. Proc. 31, Pittsburgh, PA, 1984) pp. 143152.
7. Suzuki, Y. and Okamoto, H., J. Appl. Phys. 58, 3456(1985).
8. Ourmazd, A., Tsang, W. T., Rentschler, J. A., and Taylor, D. W., Appl. Phys. lett. 50, 1417(1987).
9. Ichinose, H., Furuta, T., Sakaki, H., and Ishida, Y., Proc. XIth Int. Cong. on Electron Microscopy, Kyoto (The Japanese society of Electron Microscopy, Tokyo, 1986) pp. 1483–1486.
10. de Jong, A. F., Bender, H., and Coene, W., Ultramicroscopy 21, 373(1987).
11. Sood, A. K., Menendez, J., Cardona, M., and Ploog, K., Phys. Rev. Lett. 54, 2111(1987).
12. Yanaka, T., Proc. XIth Int. Cong. on Electron Microscopy, Kyoto (The Japanese society of Electron Microscopy, Tokyo, 1986) pp. 243.
13. Cowley, J. H. and Moodie, A. F.: Acta. Cryst. 10, 609(1957).
14. Nakamura, T., Ikeda, M., Muto, S., and Umebu, I., unpublished data.

Comparative Study of Interface Structure in GaAs/AlAs Superlattices By Tem and Raman Scattering

  • T. Nakamura (a1), M. Ikeda (a1), S. Muto (a1), S. Komiya (a1) and I. Umebu (a1)...

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