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Comparative study of HVPE- and MOCVD-grown nitride structures for UV lasing application

Published online by Cambridge University Press:  17 March 2011

J. B. Lam ,
G. H. Gainer ,
S. Bidnyk ,
Amal Elgawadi ,
G. H. Park ,
J. Krasinski ,
J. J. Song ,
D. V. Tsvetkov  and
V. A. Dmitriev
J. B. Lam
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA
G. H. Gainer
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA
S. Bidnyk
Affiliation:
Zenastra Photonics, Inc., Ottawa, ON K1G 4J8, Canada
Amal Elgawadi
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA
G. H. Park
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA
J. Krasinski
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA
J. J. Song
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA
D. V. Tsvetkov
Affiliation:
Technologies and Devices International, Inc., Gaithersburg, MD 20877, USA
V. A. Dmitriev
Affiliation:
Technologies and Devices International, Inc., Gaithersburg, MD 20877, USA
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Abstract

We studied and compared the emission properties of optically excited (Al)GaN structures grown by two different techniques: hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapor deposition (MOCVD). We successfully achieved stimulated emission (SE) in an HVPE-grown GaN epilayer and a GaN/AlGaN double heterostructure at 10 K and room temperature. We found that the SE threshold and photoluminescence efficiency of the HVPE-grown samples are similar to those of high-quality MOCVD-grown structures. Photoluminescence measurements from 10 to 300 K show that the HVPE GaN has a high density of non-radiative recombination channels, especially those activated below 100 K. This study represents the first demonstration of SE in HVPE-grown (Al)GaN heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.4
Copyright
Copyright © Materials Research Society 2001

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References

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