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Comparative Growth of AIN on Singular and Off-Axis 6H and 4H-SiC by MOCVD

Published online by Cambridge University Press:  15 February 2011

S. Wilson ,
C. S. Dickens ,
J. Griffin  and
M. G. Spencer
S. Wilson
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington, DC 20059
C. S. Dickens
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington, DC 20059
J. Griffin
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington, DC 20059
M. G. Spencer
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University, Washington, DC 20059
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Abstract

A comparison study of the growth of aluminum nitride (AIN) single crystal epitaxy on 6H-SiC and 4H-SiC substrates has been performed. The material has been characterized using atomic force microscopy (AFM) and reflective high energy electron diffraction (RHEED). AIN crystals were deposited on the following 6H-SiC substrates: singular with and without an initial SiC epilayer, and 3.5° off-axis with and without an initial SIC epilayer. AIN crystals were deposited on 8.0° off-axis 4H-SiC with and without initial SIC epilayers. AFM shows that the deposition of AIN on 6H-SiC and 4H-SIC with an initial SiC epilayer displays high quality quasi-two dimensional growth as atomically flat or step flow epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.61
Copyright
Copyright © Materials Research Society 1999

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