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Combinatorial Search for Transparent Oxide Diluted Magnetic Semiconductors

Published online by Cambridge University Press:  17 March 2011

T. Fukumura
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
M. Kawasaki
Affiliation:
Combinatorial Materials Exploration and Technology (COMET), Tsukuba 305-0044, Japan
Zhengwu Jin
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
H. Kimura
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
Y. Yamada
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
M. Haemori
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan
Y. Matsumoto
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
K. Inaba
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
M. Murakami
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
R. Takahashi
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
T. Hasegawa
Affiliation:
Combinatorial Materials Exploration and Technology (COMET), Tsukuba 305-0044, Japan
H. Koinuma
Affiliation:
Combinatorial Materials Exploration and Technology (COMET), Tsukuba 305-0044, Japan CREST, Japan Science and Technology Corporation, Tokyo 169-0072, Japan Frontier Collaborative Research Center, and Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Abstract

Diluted magnetic semiconductor (DMS) possesses charge and spin degrees of freedom leading to their interplay promising for novel devices. DMSs based on II-VI and III-V compound semiconductors have been extensively studied so far. Recently, the oxide semiconductors doped with transition metal magnetic impurity have attracted much attention for the possible high ferromagnetic Curie temperature. Here, we overview recent studies of the transparent oxide based DMSs, ZnO, TiO2, and SnO2 doped with 3d transition metals, by using the combinatorial materials synthesis and the high throughput screening.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

1. Furdyna, J. K., J. Appl. Phys. 64, R29 (1988).Google Scholar
2. Haury, A., Wasiela, A., Arnoult, A., Cibert, J., Tatarenko, S., Dietl, T. and d'Aubigné, Y. Merle, Phys. Rev. Lett. 79, 511 (1997).Google Scholar
3. Dietl, T., Haury, A. and d'Aubigne, Y. M., Phys. Rev. B55, R3347 (1997).Google Scholar
4. Ohno, H., Science 281, 951 (1998).Google Scholar
5. Koshihara, S., Oiwa, A., Hirasawa, M., Katsumoto, S., Iye, Y., Urano, C., Takagi, H. and Munekata, H., Phys. Rev. Lett. 78, 4617 (1997).Google Scholar
6. Ohno, Y., Young, D. K., Beschoten, B., Matsukara, F., Ohno, H. and Awschalom, D. D., Nature 402, 790, (1999).Google Scholar
7. Ohno, H., Chiba, D., Matsukura, F., Omiya, T., Abe, E., Dieti, T., Ohno, Y. and Ohtani, K., Nature 408, 944 (2000).Google Scholar
8. Medvedkin, G. A., Ishibashi, T., Nishi, T., Hayata, K., Hasegawa, Y. and Sato, K., Jpn. J. Appl. Phys. 39, L949 (2000).Google Scholar
9. Matsumoto, Y., Murakami, M., Shono, T., Hasegawa, T., Fukumura, T., Kawasaki, M., Ahmet, P., Chikyow, T., Koshihara, S. and Koinuma, H., Science 291, 854 (2001).Google Scholar
10. Akinaga, H., Manago, T. and Shirai, M., Jpn. J. Appl. Phys. 39, L118 (2000).Google Scholar
11. Zhao, J. H., Matsukura, F., Takamura, K., Abe, E., Chiba, D. and Ohno, H., Appl. Phys. Lett. 79, 2776 (2001).Google Scholar
12. Tang, Z. K., Yu, P., Wong, G. K. L., Kawasaki, M., Ohtomo, A., Koinuma, H. and Segawa, Y., Solid State Commun. 103, 459 (1997).Google Scholar
13. Kawazoe, H., Yasukawa, M., Hyodo, H., Kurita, M., Yanagi, H. and Hosono, H., Nature 389, 939 (1997).Google Scholar
14. Hanak, J. J., J. Mater. Sci. 5, 964 (1970).Google Scholar
15. Lederman, D., Vier, D. C., Mendoza, D., Santamaria, J., Shultz, S. and Schuller, I. K., Appl. Phys. Lett. 66, 3677 (1995).Google Scholar
16. Xiang, X.-D., Sun, X., Briceño, G., Lou, Y., Wang, K.-A., Chang, H., Wallce-Freedman, W. G., Chen, S.-W. and Schultz, P. G., Science 268, 1738 (1995).Google Scholar
17. Takeuchi, I., Appl. Surf. Sci. (2002) (in press).Google Scholar
18. Dover, R. B. Van, Schneemeyer, L. F. and Fleming, R. M., Nature 392, 162 (1998).Google Scholar
19. Yoo, Y. K., Duewer, F., Yang, H., Ying, D., Li, J. W. and Xiang, X. D., Nature 406, 704 (2000).Google Scholar
20. Takeuchi, I., Chang, K., Sharma, R. P., Bendersky, L. A., Chang, H., Xiang, X.-D., Stach, E. A. and Song, C.-Y., J. Appl. Phys. 90, 2474 (2001).Google Scholar
21. Fukumura, T., Okimoto, Y., Ohtani, M., Kageyama, T., Koida, T., Kawasaki, M., Hasegawa, T., Tokura, Y. and Koinuma, H., Appl. Phys. Lett. 77, 3426 (2000).Google Scholar
22. Ohnishi, T., Komiyama, D., Koida, T., Ohashi, S., Stauter, C., Koinuma, H., Ohtomo, A., Lippmaa, M., Nakagawa, N., Kawasaki, M., Kikuchi, T. and Omote, K., Appl. Phys. Lett. 79, 536 (2001).Google Scholar
23. Matsumoto, Y., Murakami, M., Jin, Z., Ohtomo, A., Lippmaa, M., Kawasaki, M. and Koinuma, H., Jpn. J. Appl. Phys. 38, L603 (1999).Google Scholar
24. Fukumura, T., Ohtani, M., Nishimura, J., Kageyama, T., Koida, T., Lippmaa, M., Kawasaki, M., Hasegawa, T. and Koinuma, H., Proc. SPIE 4281, 17 (2001).Google Scholar
25. Morooka, T., Nakayama, S., Odawara, A., Ikeda, M., Tanaka, S. and Chinone, K., IEEE Trans. Appl. Supercond. 9, 3491 (1999).Google Scholar
26. Ohtomo, A., Kawasaki, M., Koida, T., Masubuchi, K., Koinuma, H., Sakurai, Y., Yoshida, Y., Yasuda, T. and Segawa, Y., Appl. Phys. Lett. 72, 2466 (1998).Google Scholar
27. Onodera, A., Tamaki, N., Kawamura, Y., Sawada, T. and Yamashita, H., Jpn. J. Appl. Phys. 35, 5160 (1996).Google Scholar
28.T Fukumura, Jin, Z., Ohtomo, A., Koinuma, H. and Kawasaki, M., Appl. Phys. Lett. 75, 3366 (1999).Google Scholar
29. Jin, Z., Murakami, M., Fukumura, T., Matsumoto, Y., Ohtomo, A., Kawasaki, M. and Koinuma, H., J. Cryst. Growth 214/215, 55 (2000).Google Scholar
30. Jin, Z., Fukumura, T., Kawasaki, M., Ando, K., Saito, H., Sekiguchi, T., Yoo, Y. Z., Murakami, M., Matsumoto, Y., Hasegawa, T. and Koinuma, H., Appl. Phys. Lett. 78, 3824 (2001).Google Scholar
31. Ando, K., Saito, H., Jin, Z., Fukumura, T., Kawasaki, M., Matsumoto, Y. and Koinuma, H., J. Appl. Phys. 89, 7284 (2001).Google Scholar
32. Ando, K., Saito, H., Jin, Zhengwu, Fukumura, T., Kawasaki, M., Matsumoto, Y. and Koinuma, H., Appl. Phys. Lett. 78, 2700 (2001).Google Scholar
33. Fukumura, T., Jin, Z., Kawasaki, M., Shono, T., Hasegawa, T., Koshihara, S. and Koinuma, H., Appl. Phys. Lett. 78, 958 (2001).Google Scholar
34. Sawicki, M., Dietl, T., Kossut, J., Igalson, J., Wojtowicz, T. and Plesiewicz, W., Phys. Rev. Lett. 56, 508 (1986).Google Scholar
35. Wojtowicz, T., Dietl, T., Sawicki, M., Plesiewicz, W. and Jaroszynski, J., Phys. Rev. Lett. 56, 2419 (1986).Google Scholar
36. Matsumoto, Y., Takahashi, R., Murakami, M., Koida, T., Fan, X.-J., Hasegawa, T., Fukumura, T., Kawasaki, M., Koshihara, S. and Koinuma, H., Jpn J. Appl. Phys. 40, L1204 (2001).Google Scholar
37. Kimura, H., Fukumura, T., Koinuma, H. and Kawasaki, M., Appl. Phys. Lett. 80, 94 (2001).Google Scholar
38. Dietl, T., Ohno, H., Matsukura, F., Cibert, J. and Ferrand, D., Science 287, 1019 (2000).Google Scholar
39. Sato, K. and Katayama-Yoshida, H., Jpn J. Appl. Phys. 39, L555 (2000); ibid 40, L651 (2001).Google Scholar
40. Ueda, K., Tabata, H. and Kawai, T., Appl. Phys. Lett. 79, 988 (2001).Google Scholar
41 Wakano, T., Fujimura, N., Morinaga, Y., Abe, N., Ashida, A., and Ito, T., Physica E10, 260 (2001).Google Scholar
42 Ando, K., Extended Abstracts of the 7th symposium on the Physics and Application of Spin-related Phenomena in Semiconductors (PASPS-7), Yokohama, Japan, (2001).Google Scholar