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Coexistence of Shallow and Localized Donor Centers in Bulk GaN Crystals Studied by High-Pressure Raman Spectroscopy

Published online by Cambridge University Press:  10 February 2011

P. Perlin ,
T. Suski ,
A. Polian ,
J. C. Chervin ,
W. Knap ,
J. Camassel ,
I. Grzegory ,
S. Porowski  and
J. W. Erickson
P. Perlin
Affiliation:
Center for High Technology Materials, University of New Mexico, EECE Building, Albuquerque, NM 87131–6081 USA On live from High Pressure Research Center, “Unipress” Warsaw, Poland
T. Suski
Affiliation:
High Pressure Research Center “Unipress”, Sokolowska 29/37, 01–142 Warszawa, Poland
A. Polian
Affiliation:
Physique Des Milieux Condenses, Universitè Pierre et Marie Curie, France, Place Jussieu, F-75251 Paris, France
J. C. Chervin
Affiliation:
Physique Des Milieux Condenses, Universitè Pierre et Marie Curie, France, Place Jussieu, F-75251 Paris, France
W. Knap
Affiliation:
Groupe d’Etudes des Semiconducteurs, Universitè Montpellier 2 CNRS, place Eugene Bataillon F-34095 Montepellier, France.
J. Camassel
Affiliation:
Groupe d’Etudes des Semiconducteurs, Universitè Montpellier 2 CNRS, place Eugene Bataillon F-34095 Montepellier, France.
I. Grzegory
Affiliation:
High Pressure Research Center “Unipress”, Sokolowska 29/37, 01–142 Warszawa, Poland
S. Porowski
Affiliation:
High Pressure Research Center “Unipress”, Sokolowska 29/37, 01–142 Warszawa, Poland
J. W. Erickson
Affiliation:
Charls Evans and Associates, Redwood City, CA.
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Abstract

Character of the metal-insulator transition which occurs at about 23 GPa in bulk GaN crystals has been studied by means of high pressure Raman spectroscopy. The related freeze-out of electrons is caused by the localized donor state formed by most likely oxygen and emerging at high pressures to the band gap of GaN. As a result, the electron concentration drops from its initial value of 5.1019 cm-3 to about 3. 1018 cm-3. These remaining electrons originate likely from another donor center with effective mass character, probably carbon. The obtained results raise a question whether the nitrogen vacancy is abundant enough to be observed in bulk GaN crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 689
Copyright
Copyright © Materials Research Society 1997

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References

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