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Coexistence of Shallow and Localized Donor Centers in Bulk GaN Crystals Studied by High-Pressure Raman Spectroscopy

  • P. Perlin (a1) (a2), T. Suski (a3), A. Polian (a4), J. C. Chervin (a4), W. Knap (a5), J. Camassel (a5), I. Grzegory (a3), S. Porowski (a3) and J. W. Erickson (a6)...

Abstract

Character of the metal-insulator transition which occurs at about 23 GPa in bulk GaN crystals has been studied by means of high pressure Raman spectroscopy. The related freeze-out of electrons is caused by the localized donor state formed by most likely oxygen and emerging at high pressures to the band gap of GaN. As a result, the electron concentration drops from its initial value of 5.1019 cm-3 to about 3. 1018 cm-3. These remaining electrons originate likely from another donor center with effective mass character, probably carbon. The obtained results raise a question whether the nitrogen vacancy is abundant enough to be observed in bulk GaN crystals.

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Coexistence of Shallow and Localized Donor Centers in Bulk GaN Crystals Studied by High-Pressure Raman Spectroscopy

  • P. Perlin (a1) (a2), T. Suski (a3), A. Polian (a4), J. C. Chervin (a4), W. Knap (a5), J. Camassel (a5), I. Grzegory (a3), S. Porowski (a3) and J. W. Erickson (a6)...

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