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Coarsening and Slope Selection During Crystal Growth and Etching of Ge(001)

Published online by Cambridge University Press:  21 February 2011

S. Jay Chey ,
Joseph E. Van Nostrand  and
David G. Cahill
S. Jay Chey
Affiliation:
Department of Materials Science and Materials Research Laboratory, University of Illinois, Urbana, IL 61801.
Joseph E. Van Nostrand
Affiliation:
Department of Materials Science and Materials Research Laboratory, University of Illinois, Urbana, IL 61801.
David G. Cahill
Affiliation:
Department of Materials Science and Materials Research Laboratory, University of Illinois, Urbana, IL 61801.
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Abstract

The evolution of surface morphology during low temperature crystal growth by molecular beam epitaxy and etching by low-energy ions is characterized by in-situ scanning tunneling microscopy. Epitaxial growth of Ge(001) at low temperatures in the vicinity of 155°C produces a pattern of growth mounds while etching at temperatures near 270°C produces a pattern of low aspect ratio pits. The characteristic in-plane length scale of the surface roughness d increase with a power law dependence on time but the exponent depends on temperature and process. Prior to the onset of amorphous growth, the amplitude of the surface roughness G1/2(d/2) increases more rapidly than d; i.e. the slope of the sides of the growth mounds increases with time. By contrast, the ratio of Gl/2(d/2) to d remains nearly constant during ion etching for a wide range of etching times.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 221
Copyright
Copyright © Materials Research Society 1996

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References

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