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Chemistry and Solid State Physics of Microcrystalline Silicon

Published online by Cambridge University Press:  21 February 2011

Stan Vepřek
Stan Vepřek*
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenberstr. 4, D-8046 Garching-Munich, F.R.G
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Abstract

Various methods for the preparation of microcrystalline (nanocrystalline) silicon are summarized and compared with respect to the possibility of the control of the materials quality and scaling of the deposition process to large area applications. It is shown that the deposition of a pure microcrystalline material is achieved under conditions close to partial chemical equilibrium. The mechanism of the crystallization during the growth will be briefly discussed.

The second part of the paper deals with the physical properties of pure microcrystalline silicon which is free of any amorphous phase detectable by X-ray diffraction, i.e. less than about 1 vol%. Several aspects of electric conductivity, optical absorption and Raman scattering which have been frequently misinterpreted in the literature will be reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 39
Copyright
Copyright © Materials Research Society 1990

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References

[1] Genzel, L., in: “Festkörperprobleme” Vol. XIV, ed. Queisser, H.J., Vieweg, Braunschweig 1974, p. 183 Google Scholar
[2] “Properties of Amorphous Silicon”, 2nd ed., EMIS Datareviews Series No.1, INSPEC, The Institution of Electrical Engineers, London, 1989 Google Scholar
[3] Veprek, S., J. Chem. Phys. 57,952(1972)Google Scholar
[4] Wagner, J.J. and Veprek, S., Plasma Chem. Plasma Processing 2,219(1982); 1,219(1983)Google Scholar
[5] Ensslen, K. and Veprek, S., Plasma Chem. Plasma Processing 7,139(1987)Google Scholar
[8] Veprek, S., Iqbal, Z. and Sarott, F.-A., Phil. Mag. B 45,137(1982)Google Scholar
[9] Veprek, S., Sarott, F.-A. and Iqbal, Z., Phys. Rev. 36,3344(1987)Google Scholar
[6] Veprek, S., Heintze, M., Sarott, F.-A., Jurcik-Rajman, M. and Willmott, P., MRS Symp. Proc. Vol.118,3(1988)Google Scholar
[7] Veprek, S. and Heintze, M., Plasma Chem. Plasma Processing 10,3(1990)Google Scholar
[10] Konuma, M., Curtins, H., Sarott, F.-A. and Veprek, S., Phil. Mag. B 55,377(1987)Google Scholar
[11] Iqbal, Z. and Veprek, S., J. Phys. C 15,377(1982)Google Scholar
[12] Richter, J. and Ley, L., J. de Phys 43,Cl–247(1982)Google Scholar
[13] Collins, R.W. and Yang, B.Y., J. Vac. Sci. Technol. B 7,1155(1989)Google Scholar
[14] Veprek, S., Proc. Mater. Res. Soc. Europe, Strasbourg 1984, eds. Pinard, P. and Kalbitzer, S., Les éditions de physique, Les Ullis, France (1984) p.425 Google Scholar
[15] Veprek, S., Sarott, F.-A., Rambert, S. and Taglauer, E., J. Vac. Sci. Technol. A 7,2614(1989)Google Scholar
[16] Veprek, S., Iqbal, Z., Kühne, R.O., Capezzuto, P., Sarott, F.-A. and Gimzewski, J.K., J.Phys. C 16, 6241(1983)Google Scholar
[17] Veprek, S., Heintze, M., Bayer, R. and Jurcik-Rajman, M., MRS Symp. Proc., San Diego, April 1989, Symp. E (in press)Google Scholar
[18] Fauchet, P.M. and Campbell, I.H., Critical Reviews in Solid State and Material Sciences, Vol. 14, Supplement 1 (1988) p.S 79 Google Scholar
[19] Fauchet, P.M. and Campbell, I.H., MRS Symp. Proc., Boston November 1989 (this Volume)Google Scholar
[20] Veprek, S., Thin Solid Films 175,129(1989)Google Scholar
[21] Jasinski, J.M. and Chu, J.O., J. Chem. Phys. 88,1678(1988)Google Scholar
[22] John, P. and Purnell, J.H., J. Chem. Soc. Faraday Trans. 69,1455(1973)Google Scholar
[23] Veprek, S. and Marecek, V., Solid State. Electron. 11,683(1968)Google Scholar
[24] Webb, A.P. and Veprek, S., Chem. Phys. Lett. 62,173(1979)Google Scholar
[25] Usui, S. and Kikuchi, M., J. Non-Cryst. Solids 34,1(1979)Google Scholar
[26] Matsuda, A., Yamasaki, S., Nakagawa, K., Okushi, H., Tanaka, K., Izima, S., Matsumara, M. and Yamamoto, Y., Jap. J. Appl. Phys. 12,L305(1980)Google Scholar
[27] Hamasaki, T., Kurata, H., Hirose, M. and Osaka, Y., Appl. Phys. Lett. 37,1084(1980)Google Scholar
[28] Klug, H.P. and Alexander, L.E., “X-Ray Diffraction Procedures”, 2nd. ed. John Wiley & Sons, New York 1974 Google Scholar
[29] Williamson, G.K. and Hall, W.H., Acta Met. 1,22(1953)Google Scholar
[30] Sarott, F.-A., Ph D Thesis, University of Zürich 1989 Google Scholar
[32] Curtins, H. and Veprek, S., Solid State Commun. 67,215(1986)Google Scholar
[33] Mattenberger, F. and Veprek, S., CHEMTRONICS 1,107(1986)Google Scholar