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Chemisorption of HF on Silicon Surfaces

Published online by Cambridge University Press:  25 February 2011

S. A. Joycea ,
J. A. Yarmoff ,
A. L. Johnson  and
T. E. Madey
S. A. Joycea
Affiliation:
Surface Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899
J. A. Yarmoff
Affiliation:
Surface Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899
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Abstract

We have investigated the interaction of gaseous hydrofluoric acid (HF) with single crystal silicon surfaces using soft x-ray photoemission spectroscopy and Electron Stimulated Desorption Ion Angular Distributions (ESDIAD). Examination of the Si(2p) core level for surfaces saturated with HF shows the formation of silicon-fluoride bonds indicating the dissociative chemisorption of HF on both Si(111) and Si(100) surfaces. Inspection of the F(2s) and F(2p) valence levels at saturation coverage indicate that only one-half monolayer of fluorine bonds to the silicon. The primary ion desorbed by electron bombardment of these surfaces is F+ with only a minor contribution from H+. ESDIAD images from a saturation coverage of HF on stepped Si(100) surfaces reveal F+ desorption primarily along the direction of the terrace dimers. The ESDIAD patterns from HF adsorbed on Si(111) are characterized by strong normal F+ emission with a weak background component of off-normal emission. These results are consistent with the dissociative chemisorption of HF where the ion emission direction is determined by the Si-F bond directions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 185
Copyright
Copyright © Materials Research Society 1989

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References

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