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Chemical-Mechanical Planarization of the Polymer Interlayer Dielectrics

Published online by Cambridge University Press:  10 February 2011

S. P. Murarka
S. P. Murarka*
Affiliation:
SRC Center for Advanced Interconnect Science and Technology and Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th St., Troy, NY 12180-3590, smurarka@unix.cie.rpi.edu
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Abstract

Low dielectric constant polymers are being investigated for application as interlayer dielectrics with copper as the metal in a multilevel interconnect scheme. Processing of such structures willrequire the use of chemical-mechanical planarization (CMP) technologies for both the metal and the dielectric. Polymers are comparatively quite soft. They are not readily attacked by chemicals thus requiring more mechanical component dependency compared to the chemical component in the CMP. Polymers are thus prone to scratching during CMP which may lead to reliability problems both from materials and electrical points of view. In this presentation we will discuss the use of chemical engineering and chemistry principles to optimize the polishing process to minimize or eliminate the scratching and other mechanical damages. The role of CMP parameters such as velocity, pressure, particle size, viscosity, and chemistry will be discussed to elucidate the emerging “scratch-free”-CMP-concept.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 277
Copyright
Copyright © Materials Research Society 1998

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