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Chemical-Mechanical Planarization of Copper: The Effect of Inhibitor and Complexing Agent

Published online by Cambridge University Press:  01 February 2011

Ying Luo ,
Tianbao Du  and
Vimal Desai
Ying Luo
Affiliation:
Advanced Materials Processing and Analysis CenterUniversity of Central FloridaOrlando, FL 32816 U.S.A.
Tianbao Du
Affiliation:
Advanced Materials Processing and Analysis CenterUniversity of Central FloridaOrlando, FL 32816 U.S.A.
Vimal Desai
Affiliation:
Advanced Materials Processing and Analysis CenterUniversity of Central FloridaOrlando, FL 32816 U.S.A.
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Abstract

The present investigation was focused on understanding of the oxidation, dissolution and modification of Cu surface in slurries at various pH using hydrogen peroxide as oxidizer, glycine as complexing agent and 3-amino-triazol (ATA) as inhibitor during Cu-CMP. The electrochemical process involved in the oxidative dissolution of copper was investigated by potentiodynamic polarization studies. Surface modification of copper was investigated using Xray photoelectron spectroscopy to understand the interaction of Cu-H2O2-glycine-ATA during CMP. In the absence of glycine and ATA, the copper removal rate is found to be high in a slurry with 5% H2O2 at pH 2, then it decreases with increasing pH and reaches the minimum at pH 6, it continuously increases at alkaline condition. In the presence of 0.01M glycine, the removal rate of copper decreases in acidic slurries while increases significantly in alkaline slurries. With the further addition of ATA, the copper removal rate was reduced. However, better surface planarity was obtained. The present investigation enhanced understanding of the mechanism of Cu CMP in the presence of oxidizer, complexing agent and inhibitor for formulation of a highly effective CMP-slurry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F6.10
Copyright
Copyright © Materials Research Society 2003

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