Skip to main content Accessibility help
×
Home

Chemical-Mechanical Planarization of Copper: The Effect of Inhibitor and Complexing Agent

  • Ying Luo (a1), Tianbao Du (a1) and Vimal Desai (a1)

Abstract

The present investigation was focused on understanding of the oxidation, dissolution and modification of Cu surface in slurries at various pH using hydrogen peroxide as oxidizer, glycine as complexing agent and 3-amino-triazol (ATA) as inhibitor during Cu-CMP. The electrochemical process involved in the oxidative dissolution of copper was investigated by potentiodynamic polarization studies. Surface modification of copper was investigated using Xray photoelectron spectroscopy to understand the interaction of Cu-H2O2-glycine-ATA during CMP. In the absence of glycine and ATA, the copper removal rate is found to be high in a slurry with 5% H2O2 at pH 2, then it decreases with increasing pH and reaches the minimum at pH 6, it continuously increases at alkaline condition. In the presence of 0.01M glycine, the removal rate of copper decreases in acidic slurries while increases significantly in alkaline slurries. With the further addition of ATA, the copper removal rate was reduced. However, better surface planarity was obtained. The present investigation enhanced understanding of the mechanism of Cu CMP in the presence of oxidizer, complexing agent and inhibitor for formulation of a highly effective CMP-slurry.

Copyright

References

Hide All
1. Nitta, T. Ohmi, T. Hoshi, T. Sakai, S. Sakaibara, K. Imai, S. Shibata, T. J.Electrochem. Soc. 140, 1131 (1995).
2. Steigerwald, J.M. Murarka, S.P. Gutmann, R.J. Duquette, D.J. Mater. Chem. Phys. 41, 217 (1995).
3. Hu, C.K. Luther, B. Kaufman, F.B. Humnel, J. Uzoh, C. and Pearson, D.J. Thin Solid Films, 262, 84 (1994).
4. Lakshminarayanan, S. Steigerward, J.M. Price, D.T. Bourgeois, M. Chow, T.P. Gutmamn, R.J., and Murarka, S.P. IEEE Electron. Device Lett., 15, 307 (1994).
5. Tamilmani, S. Huang, W. Raghavan, S. and Small, R. J. Electrochem. Soc. 149, G638 (2002).
6. Luo, Q. Campbell, D.R. and Babu, S.V. Langmuir, 12, 3563 (1996).
7. Luo, Q. Campbell, D.R. and Babu, S.V. Thin Solid Films, 311, 177 (1997).
8. Carpio, R. Farkas, J. and Jairath, R. Thin Solid Films, 266, 238 (1995).
9. Aksu, S. Doyle, F.M. J. Electrochem. Soc. 149, B340 (2002).
10. Hirabayashi, H. Huguchi, M. Kinoshita, M. Kaneko, H. Hayasaska, N. Mase, K. and , J.Oshima, U.S. Pat. 5,575,885 (1996).
11. Hirabayashi, H. Huguchi, M. Kinoshita, M. Kaneko, H. Hayasaska, N. Mase, K. and Oshima, J., in Proceedings of the 1st International Chemical-Mechanical Planarization for VLSI/ULSIMultilevel Interconnection Conference CMP-MIC, Institute for Microelectronics Interconnection, 1996, p. 119.
12. Aksu, S. Doyle, F.M. J. Electrochem. Soc. 149, G352 (2002).
13. Hariharaputhiran, M. Zhang, J. Ramarajan, S. Keleher, J. J. Li, Y. Babu, S. V. J. Electrochem. Soc., 147, 3820 (2000).
14. Seal, S. Kuiry, S. C. and Heinmen, B. Thin Solid Films, 423, 243 (2003).
15. El-Shafei, A. A., Moussa, M. N. H. El-Far, A. A., J. Appl. Electrochemistry, 27, 1339 (1997).

Chemical-Mechanical Planarization of Copper: The Effect of Inhibitor and Complexing Agent

  • Ying Luo (a1), Tianbao Du (a1) and Vimal Desai (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed