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Chemical Vapor Deposition Route to the Fabrication of thin Films of High Temperature Oxide Superconductors

Published online by Cambridge University Press:  28 February 2011

Alain E. Kaloyeros ,
Kenneth C. Brooks ,
Aiguo Feng  and
Jonathan Garhart
Alain E. Kaloyeros
Affiliation:
Physics Department, State University of New York at Albany, Albany, NY 12222
Kenneth C. Brooks
Affiliation:
Chemistry Department, University of Illinois at Urbana‐Champaign, Urbana, XL 61801
Aiguo Feng
Affiliation:
Physics Department, State University of New York at Albany, Albany, NY 12222
Jonathan Garhart
Affiliation:
Physics Department, State University of New York at Albany, Albany, NY 12222
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Abstract

High quality Y‐Ba‐Cu‐O thin films were produced by metal‐organic chemical vapor deposition (MOCVD) using metal chelates of P‐diketonate ligands. The films were grown in a cold‐wall CVD reactor at a reactor pressure of 10 torr and substrate temperature in the range 450‐550°C. Characterization studies were performed using Rutherford Backscattering (RBS), Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy‐dispersive x‐ray spectroscopy (EDXS). These studies showed that the films were uniform, continuous, adherent and highly pure—carbon and fluorine contents were below the detection limits of the techniques used. Four point resistivity measurements showed that the films had a sharp superconducting transition at 9OK and exhibited current densities of ‐3x105 A/cm2 (B=0, T=65K) . The Y‐Ba‐Cu‐0 films thus grown were subsequently compared to radio‐frequency (rf) sputtered Y‐Ba‐Cu‐O films. It was found that the MOCVD‐produced films were superior in terms of uniformity, adherence, and electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 577
Copyright
Copyright © Materials Research Society 1990

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References

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