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Chemical Vapor Deposition of Silicon Carbide Using a Novel Organometallic Precursor

Published online by Cambridge University Press:  25 February 2011

Wei Lee ,
Leonard V. Interrante ,
Corrina Czekaj ,
John Hudson ,
Klaus Lenz  and
Bing-Xi Sun
Wei Lee
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
Leonard V. Interrante
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
Corrina Czekaj
Affiliation:
Department of Chemistry, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
John Hudson
Affiliation:
Department of Materials Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
Klaus Lenz
Affiliation:
Department of Materials Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
Bing-Xi Sun
Affiliation:
Department of Materials Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590.
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Abstract

Dense silicon carbide films have been prepared by low pressure chemical vapor deposition (LPCVD) using a volatile, heterocyclic, carbosilane precursor, MeHSiCH2SiCH2Me(CH2SiMeH2). At deposition temperatures between 700 and 800° C, polycrystalline, stoichiometric SiC films have been deposited on single crystal silicon and fused silica substrates. Optical microscopy and SEM analyses indicated formation of a transparent yellow film with a uniform, featureless surface and good adherence to the Si(lll) substrate. The results of preliminary studies of the nature of the gaseous by-products of the CVD processes and ultrahigh vacuum physisorption and decomposition of the precursor on Si(100) substrates are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 431
Copyright
Copyright © Materials Research Society 1989

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References

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