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Chemical Vapor Deposition of Chromium Carbide from Organometallic Precursors

Published online by Cambridge University Press:  25 February 2011

N. M. Rutherford ,
C. E. Larson  and
R. L. Jackson
N. M. Rutherford
Affiliation:
IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120
C. E. Larson
Affiliation:
IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120
R. L. Jackson
Affiliation:
IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120
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Abstract

Chemical vapor deposition from CpCr(CO)3H, Cr(CH2CMe3)4, and Cr(NPri2)3 at low pressures yields chromium carbide films at temperatures as low as 330 °C. The films are mirror-bright and extremely smooth with no significant features observable by SEM. In general, films prepared at higher temperatures had lower resistivities, and were more likely to be crystalline than those prepared at lower temperatures. However, amorphous films deposited at 330 °C were much harder than the crystalline films. Chemical vapor deposition from Cr(NPri2)3 resulted in carbide films with the most desirable properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 439
Copyright
Copyright © Materials Research Society 1989

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