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Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH4F Treated Si(111) Surfaces

Published online by Cambridge University Press:  25 February 2011

Takeo Hattori
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan
Hiroki Ogawa
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan
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Abstract

Chemical structures of native oxides formed during wet chemical treatments on NH4F treated Si(111) surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared Attenuated Total Reflection(FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxides and those at native oxide/silicon interface are negligibly small in the case of native oxides formed in H2SO4-H2O2-H2O solution. Based on this discovery, it was confirmed that native oxides can be characterized by the amount of Si-H bonds in native oxides. Furthermore, it was found that the combination of various wet chemical treatments with the treatment in NH4OH-H2O2-H2O solution results in the drastic decrease in the amount of Si-H bonds in native oxides.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Kern, W.: J. Electrochem. Soc. 137, 1887 (1990) and references therein.CrossRefGoogle Scholar
2. Ohmi, T., Miyashita, M., Itano, M., Imaoka, T. and Kawanabe, I.: to be published in IEEE Trans. Electron Device 39, 537 (1992).CrossRefGoogle Scholar
3. Sugiyama, K., Igarashi, T., Moriki, K., Nagasawa, Y., Aoyama, T., Sugino, R., Ito, T. and Hattori, T.: Jpn. J. Appl. Phys. 29, L2401 (1990).CrossRefGoogle Scholar
4. Ogawa, H., Terada, N., Sugiyama, K., Moriki, K., Miyata, N., Aoyama, T., Sugino, R., Ito, T. and Hattori, T.: Appl. Surf. Sci. 56–58, 836 (1991).Google Scholar
5. Ogawa, H. and Hattori, T.: to be published in IEICE Trans. on Electronics E75-C, No.6 (1992).Google Scholar
6. Higashi, G. S., Becker, R. S., Chabal, Y. J. and Becker, A. J.: Appl. Phys. Lett. 58, 1656 (1991).CrossRefGoogle Scholar
7.See Fig. 4(a) in the paper by Jakob, P. and Chabal, Y. J. in J. Chem. Phys. 95, 2897 (1991).CrossRefGoogle Scholar
8. Jakob, P., Dumas, P. and Chabal, Y. J.: Appl. Phys. Lett. 59, 2968 (1991); P. Jakob, Y. J. Chabal and K. Raghavachari: Chem. Phys. Lett. 187, 325 (1991).CrossRefGoogle Scholar
9. Nagasawa, Y., Ishida, H., Takahagi, T., Ishitani, A. and Kuroda, H.: Solid State Electronics 33, Suppl., 129 (1990).Google Scholar
10. Hollinger, G. and Himpsel, F. J.: Appl. Phys. Lett. 44, 93 (1984).CrossRefGoogle Scholar
11. Siegbahn, K.: J. Electron Spectrosc. Relat. Phenom. 36, 113 (1985).CrossRefGoogle Scholar
12. Himpsel, F. J., MacFeely, F. R., Taleb-Ibrahimi, A., Yarmoff, J. A. and Hollinger, G.: Phys. Rev. B38, 6084 (1988).CrossRefGoogle Scholar
13. Terada, N., Ogawa, H., Moriki, K., Teramoto, A., Makihara, K., Morita, M., Ohmi, T. and Hattori, T.: Jpn. J. Appl. Phys. 30, 3584 (1992).CrossRefGoogle Scholar
14. Hattori, T., Takase, K., Yamagishi, H., Sugino, R., Nara, Y. and Ito, T.: Jpn. J. Appl. Phys. 28, L296 (1989).CrossRefGoogle Scholar