- Cited by 15
Hao, Ming‐yin Lai, Kafai Chen, Wei‐Ming and Lee, Jack C. 1994. Surface cleaning effect on dielectric integrity for ultrathin oxynitrides grown in N2O. Applied Physics Letters, Vol. 65, Issue. 9, p. 1133.
Ohmi, T. Nakamura, K. and Makihara, K. 1994. Highly-reliable ultra-thin oxide formation using hydrogen-radical-balanced steam oxidation technology. p. 161.
Ohmi, K. Nakamura, K. Futatsuki, T. and Ohmi, T. 1994. Hydrogen-radical-balanced steam oxidation for growing ultra-thin high-reliability gate oxide films. p. 109.
Hattori, Takeo 1995. Chemical Structures of the SiO2Si Interface. Critical Reviews in Solid State and Materials Sciences, Vol. 20, Issue. 4, p. 339.
Ohkubo, S. Tamura, Y. Sugino, R. Nakanishi, T. Sugita, Y. Awaji, N. and Takasaki, K. 1995. High quality ultra-thin (4 nm) gate oxide by UV/O/sub 3/ surface pre-treatment of native oxide. p. 111.
Iwamoto, T. Morita, M. and Ohmi, T. 1996. Highly-reliable ultra thin gate oxide formation process. p. 751.
Iwamoto, Toshiyuki and Ohmi, Tadahiro 1997. Ultra thin gate oxide reliability enhanced by carbon contamination free process. Applied Surface Science, Vol. 117-118, Issue. , p. 237.
Cho, Won-Ju Kim, Eung-Soo Kang, Jun-Jin Rha, Kwan-Goo and Kim, Hong-Seok 1998. Annealing effects of polycrystalline silicon gate on electrical properties of thin gate oxide. Solid-State Electronics, Vol. 42, Issue. 4, p. 557.
Morita, Mizuho 1998. Ultraclean Surface Processing of Silicon Wafers. p. 543.
Ushiki, T. Yu, M.-C. Kawai, K. Shinohara, T. Ino, K. Morita, M. and Ohmi, T. 1998. Reduction of plasma-induced gate oxide damage using low-energy large-mass ion bombardment in gate-metal sputtering deposition. p. 307.
Ushiki, T. Kawai, K. Mo-Chiun Yu Shinohara, T. Ino, K. Morita, M. and Ohmi, T. 1998. Improvement of gate oxide reliability for tantalum-gate MOS devices using xenon plasma sputtering technology. IEEE Transactions on Electron Devices, Vol. 45, Issue. 11, p. 2349.
Ushiki, Takeo Yu, Mo-Chiun Kawai, Kunihiro Shinohara, Toshikuni Ino, Kazuhide Morita, Mizuho and Ohmi, Tadahiro 1999. Gate oxide reliability concerns in gate-metal sputtering deposition process: an effect of low-energy large-mass ion bombardment. Microelectronics Reliability, Vol. 39, Issue. 3, p. 327.
Ishihara, Y. Nakajima, D. and Ohmi, T. 2000. Economical clean dry air system for closed manufacturing system. IEEE Transactions on Semiconductor Manufacturing, Vol. 13, Issue. 1, p. 16.
Ushiki, T. Kotani, K. Funaki, T. Kawai, K. and Ohmi, T. 2000. New aspects and mechanism of kink effect in static back-gate transconductance characteristics in fully-depleted SOI MOSFETs on high-dose SIMOX wafers. IEEE Transactions on Electron Devices, Vol. 47, Issue. 2, p. 360.
Shimada, H. Ohshima, I. Ushiki, T. Sugawa, S. and Ohmi, T. 2001. Tantalum nitride metal gate FD-SOI CMOS FETs using low resistivity self-grown bcc-tantalum layer. IEEE Transactions on Electron Devices, Vol. 48, Issue. 8, p. 1619.
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Electrical characteristics of the very thin oxides including oxide films formed in various chemicals were evaluated by means of the ultraclean oxidation system. The very thin oxides including the oxide films formed in H2SO4/H2O2, O3/H2O, and Hot-H2O22 have been found superior terms of reliability to those including the oxide films formed in NH4OH/H2O2/H2O and HCI/H2O2/H2O. The oxide films formed in H2SO4/H2O2, O3/H2O, and Hot–H2O2 have been found to function as the controlled passivation films which suppress increase of surface microroughness when heating of the wafer to thermal oxidation temperature in the inert gas ambience.
Hide All1. Miyashita, M., Itano, M., Imaoka, T., Kawanabe, I., and Ohmi, T., in Digest, Technical Papers, 1991 VLSI Symposium, Oiso, 1991, p. 45.2. Ohmi, T., Miyashita, M., Itano, M., Imaoka, T., and Kawanabe, I., IEEE Trans. Electron Devices, 39, 537(1992).3. Miyashita, M., Tsuga, T., Makihara, K., and Ohmi, T., J. Electrochem. Soc., 139, 2137(1992).4. Ohmi, T., Takano, J., Tsuga, T., Kogure, M., Aoyama, S., Matsumoto, K., and Makihara, K., in Digest, Technical Papers, 1992 VLSI Symposium, Seattle, 1992, P.24.5. Ohmi, T., Morita, M., and Hattori, T., in The Physics and Chemistry of SiO2 and The Si-SiO2 Interface, edited by Helms, C.R and Deal, B.E (Plenum, New York, 1988), p.423.6. Itoh, I., Mukaiyama, K., Ohmi, T., Morita, M., and Makihara, K., in Automated Integrated Circuits Manufacturing/1992, edited by Akins, V.E. and Harada, H., (The Electrochemical Society, Pennington, NJ, 1992), p.256.7. Ohmi, T., Morita, M., Teramoto, A., Makihara, K., and Tseng, T.S., Appl. Phys. Lett. 60, 2126(1992).8. Higashi, G.S., Chabal, Y.J., Trucks, G.W., and Raghavachari, K., Appl. Phys. Lett., 56, 656(1990).9. Watanabe, S., Nakayama, N., and Ito, T., Appl. Phys. Lett., 59, 1458(1991).10. Ohmi, T., Matsumoto, K., Nakamura, K., Makihara, K., Takano, J., and Yamamoto, Y., Appl. Phys. Lett., 62, 405(1993).11. Ohkura, A., Oku, H., Matsumoto, K., and Ohmi, T., Extended Abstract Int. Conf. Solid State Device and Materials, Yokohama, 1991, p.559.12. Offenberg, M., Liehr, M., Rubloff, G.W., and Holloway, K., Appl. Phys. Lett. 57, 1254(1990).13. Kimura, K., Ogata, Y., Tanaka, F., Imaoka, T., Takano, J., Isagawa, T., Kezuka, T., Kogure, M., Futatsuki, T., and Ohmi, T., in Contamination Control and Defect Reduction in Semiconductor Manufacturing 1/1992, edited by Schmit, D.N., (The Electrochemical Society, Pennington, NJ, 1992), p.347.14. Ohmi, T., and Aoyama, S., Appl. Phys. Lett., 61, 2479(1992).15. Kikuyama, H., Miki, N., Saka, K., Takano, J., Kawanabe, I., Miyashita, M., and Ohmi, T., IEEE Trans. Semiconductor Manuf. 4, 26(1991).
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