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Chemical Modification of Surface Steps on SI(111) Vicinal Wafers: a Bonding Model for Phase Changes in Second Harmonic Generation

Published online by Cambridge University Press:  21 February 2011

Z. Jing ,
G. Lucovsky  and
J. L. Whitten
Z. Jing
Affiliation:
Department of Physics, Box 8202, North Carolina State University, Raleigh, NC, 27695.
G. Lucovsky
Affiliation:
Department of Physics, Box 8202, North Carolina State University, Raleigh, NC, 27695.
J. L. Whitten
Affiliation:
Department of Chemistry, Box 8201, North Carolina State University, Raleigh, NC, 27695.
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Abstract

There have been several studies of second harmonic generation (SHG) from chemically-modified vicinal Si(111) wafers. The SH fields contain one-fold (ψ) and three-fold (3ψ) symmetry contributions, which originate respectively from the terrace and surface step atoms. The phase of these contributions are different for native oxides, and are a function of the frequency of the incident radiation, ω. To identify the origin of these different phases for the terrace and step SH fields, we use a classical anharmonic oscillator model based on two assumptions: (a) a significant fraction of Si atoms at the steps have dangling bonds when oxides are formed below ∼850°C, and (b) these step atoms are linked to atoms at the bottom of the steps by O-Si-O groups following annealing at >900°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 287
Copyright
Copyright © Materials Research Society 1994

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References

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