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Chemical Beam Epitaxy of III-V Semiconductor Heterostructures

Published online by Cambridge University Press:  26 February 2011

W. T. Tsang
W. T. Tsang*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

This paper reviews briefly some of the recent progress in chemical beam epitaxy (CBE) for the preparation of GaInAs(P)/InP and GaAs/AlGaAs quantum wells, superlattices, and heterostructure devices. Chemical beam epitaxy can be viewed as a chemical vapor deposition process but with the pressure inside the growth chamber sufficient, ow (< 10-4 torr) so that the transport of the gaseous reactants becomes molecular beam instead of via viscous flow. This not only eliminates the complicated gas phase reactions and the stagnant boundary layer above the substrate through which the reactants have to diffuse, but also allows for quick transitions of material compositions and dopings as those achievable by molecular beam epitaxy (MBE). For the growth of HI-V semiconductors, the group Inl elements are derived by the pyrolysis of organometallics (or inorganometallics such as dopant gases) on the heated substrate surface, while the group V elements are derived by the thermal decomposition of hydrides using a high temperature cracker. For the growth of group IV semiconductors, beams of inorganometallic compounds are used. Thus, both organometallic and inorganometallic compounds can be used as starting sources. There are two other alternatives: the gas source MBE (GSMBE), which uses group III elements evaporated from solid sources as in MBE and thermally decomposed hydrides, and the metalorganic MBE (MOMBE), which uses metalorganics as group III sources and group V elements evaporated from solid sources as in MBE. These other processes will not be reviewed here. Introd

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 463
Copyright
Copyright © Materials Research Society 1988

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References

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