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Chemical Bath Deposition of CdS Thin Films: Growth and Structural Studies

Published online by Cambridge University Press:  10 February 2011

Yuming Zhu ,
Dull Mao ,
D. L. Williamson  and
J. U. Trefny
Yuming Zhu
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
Dull Mao
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
D. L. Williamson
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
J. U. Trefny
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
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Abstract

Chemical-bath-deposited CdS thin films from an ammonia-thiourea solution have been studied by x-ray diffraction, surface profilometry, ellipsometry, and other techniques. The compactness of the CdS films, structural properties of the films, and the growth mechanism have been investigated. For the deposition conditions used, we found that the film compactness reaches its maximum at a deposition time of 35 minutes. Films grown at longer deposition times are less compact, consistent with the CdS duplex layer structure proposed previously. This transition from compact layer growth to porous layer growth is important for depositing CdS films in solar cell applications. Based on x-ray diffraction (XRD) studies, we were able to determine the crystal phase, lattice constant, and other structural properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 227
Copyright
Copyright © Materials Research Society 1996

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References

1. Britt, J. and Ferekides, C., Appl. Phys. Lett. 62, 2851 (1993).Google Scholar
2. Tuttle, J., Gabor, A.M., Contreras, M.A., Tennant, A.L., Ramannathan, J.R., Franz, A., Matson, R., and Noufi, R., 13thNREL Photovotaic Program Review, AlP Conference Proceedings 353, edited by Ullal, Harin S. and Witt, C. Edwin (ALP, New York, 1995) p.47.Google Scholar
3. Kaur, I., Pandya, D.K., and Chopra, K.L., Solid State Science and Technology 127, 943 (1980).Google Scholar
4. Lincot, D. and Borges, R.O., J. Electrochem. Soc. 139, 1880 (1992).Google Scholar
5. Borges, R.O. and Lincot, D., J. Electrochem. Soc. 140, 3464 (1993).Google Scholar
6. Dona, J.M. and Herrero, J., J. Electrochem. Soc. 139, 2810 (1992).Google Scholar
7. Chu, T.L., Chu, S.S., Schultz, N., Wang, C., and Wu, C.Q., J. Electrochem. Soc. 139, 2443 (1982).Google Scholar
8. Hernandez, L., Melo, O., Zelaya-Angel, O., and Lozada-Morales, R., J. Electrochem. Soc. 141, 3238 (1994).Google Scholar
9. Uda, H., Ikegami, S., and Sonomura, H., J. Appl. Phys. 129, 30 (1990).Google Scholar
10. Danaker, W.J., Lionc, L.E., and Morris, G.C., Sol. Energy Mater. 12, 137 (1985)Google Scholar
11. Melo, O. de, Hernandez, L., Zelaya-Angel, O., Lozada-Morales, R., and Becerril, M., Appl. Phys. Lett. 65, 1278 (1994)Google Scholar